是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
最长访问时间: | 7 ns | 最大时钟频率 (fCLK): | 100 MHz |
I/O 类型: | COMMON | 交错的突发长度: | 1,2,4,8 |
JESD-30 代码: | R-PDSO-G54 | JESD-609代码: | e0 |
内存密度: | 67108864 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 8 | 端子数量: | 54 |
字数: | 8388608 words | 字数代码: | 8000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 8MX8 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP |
封装等效代码: | TSOP54,.46,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 电源: | 3.3 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.001 A |
子类别: | DRAMs | 最大压摆率: | 0.11 mA |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | DUAL |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S640832C-TC1H | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
K4S640832C-TC1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
K4S640832C-TC70T | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, | |
K4S640832C-TC75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
K4S640832C-TC75T | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54 | |
K4S640832C-TC80 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
K4S640832C-TL1H | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
K4S640832C-TL1HT | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54 | |
K4S640832C-TL70T | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, | |
K4S640832C-TL75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 |