是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | TFBGA, |
针数: | 54 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.24 |
风险等级: | 5.83 | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 5.4 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B54 | 长度: | 11 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | -25 °C |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 2.7 V |
最小供电电压 (Vsup): | 2.3 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S56163LF-ZE1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZE1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZE750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZF1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZF1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163LF-ZF1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZF75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | |
K4S56163LF-ZF750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZG1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163LF-ZG1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 |