是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
Is Samacsys: | N | 最长访问时间: | 7 ns |
最大时钟频率 (fCLK): | 105 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | S-PBGA-B54 |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 端子数量: | 54 |
字数: | 16777216 words | 字数代码: | 16000000 |
最高工作温度: | 70 °C | 最低工作温度: | -25 °C |
组织: | 16MX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA54,9X9,32 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, FINE PITCH | 电源: | 1.8/2.5,2.5 V |
认证状态: | Not Qualified | 刷新周期: | 8192 |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.0005 A |
子类别: | DRAMs | 最大压摆率: | 0.155 mA |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4S56163LF-ZC1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZC1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163LF-ZC75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | |
K4S56163LF-ZC750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZE1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZE1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZE750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZF1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 | |
K4S56163LF-ZF1L | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54 | |
K4S56163LF-ZF1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 16MX16, 7ns, CMOS, PBGA54, 0.8 MM PITCH, LEAD FREE, BOC-54 |