Datasheet > K4S51323LF-MC75

K4S51323LF-MC75

更新时间： 2024-09-17 19:32:31

品牌	Logo	应用领域
三星 - SAMSUNG		时钟动态存储器内存集成电路
页数	文件大小	规格书
12页	144K
描述
Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90

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中文翻译

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技术参数
数据手册

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K4S51323LF-MC75 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.83
最长访问时间：	5.4 ns	最大时钟频率 (fCLK)：	133 MHz
I/O 类型：	COMMON	交错的突发长度：	1,2,4,8
JESD-30 代码：	R-PBGA-B90	JESD-609代码：	e0
内存密度：	536870912 bit	内存集成电路类型：	SYNCHRONOUS DRAM
内存宽度：	32	端子数量：	90
字数：	16777216 words	字数代码：	16000000
最高工作温度：	70 °C	最低工作温度：	-25 °C
组织：	16MX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	FBGA
封装等效代码：	BGA90,9X15,32	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, FINE PITCH	电源：	2.5 V
认证状态：	Not Qualified	刷新周期：	8192
连续突发长度：	1,2,4,8,FP	最大待机电流：	0.001 A
子类别：	DRAMs	最大压摆率：	0.3 mA
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	OTHER
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
Base Number Matches：	1

K4S51323LF-MC75 数据手册

K4S51323LF - M(E)C/L/F

Mobile SDRAM

4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

The K4S51323LF is 536,870,912 bits synchronous high data

rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (8K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• 2Chips DDP 90Balls FBGA ( -MXXX -Pb, -EXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

133MHz(CL=3), 111MHz(CL=2)

111MHz(CL=2)

Interface

Package

K4S51323LF-M(E)C/L/F75

K4S51323LF-M(E)C/L/F1H

K4S51323LF-M(E)C/L/F1L

90 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1, 83MHz(CL2)

- M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

2. Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic

DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations or desk top

computers for the first three years of five year term of this license. Nothing herein limits the rights of Samsung to use Multi-Die Plastic DRAM in other

products or other applications under paragrangh such as mobile, telecom or non-computer application(which include by way of example laptop or

notebook computers, cell phones, televisions or visual monitors)

Violation may subject the customer to legal claims and also excludes any warranty against infringement from Samsung." .

3. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake.

Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific pur

pose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use.

September 2004

12 3 4 5 6 7...12

中文翻译

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与K4S51323LF-MC75相关器件

型号	品牌	获取价格	描述	数据表
K4S51323LF-MC750	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S51323LF-MF75	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90
K4S51323LF-ML1L0	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, FBGA-90
K4S51323LF-ML75	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90
K4S51323LF-ML750	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90, FBGA-90
K4S51323P	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile-SDRAM
K4S51323PF-EF1L	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90
K4S51323PF-EF750	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4S51323PF-EF900	SAMSUNG	获取价格	Synchronous DRAM, 16MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90
K4S51323PF-MEF1L	SAMSUNG	获取价格	4M x 32Bit x 4 Banks Mobile-SDRAM

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