5秒后页面跳转
K4N51163QC-ZC250 PDF预览

K4N51163QC-ZC250

更新时间: 2024-02-27 10:39:43
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器双倍数据速率内存集成电路
页数 文件大小 规格书
64页 1266K
描述
DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84

K4N51163QC-ZC250 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA84,9X15,32
针数:84Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.28
风险等级:5.84访问模式:FOUR BANK PAGE BURST
最长访问时间:0.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):400 MHzI/O 类型:COMMON
交错的突发长度:4,8JESD-30 代码:R-PBGA-B84
JESD-609代码:e1长度:13 mm
内存密度:536870912 bit内存集成电路类型:DDR DRAM
内存宽度:16湿度敏感等级:3
功能数量:1端口数量:1
端子数量:84字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:
组织:32MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA84,9X15,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
刷新周期:8192座面最大高度:1.2 mm
自我刷新:YES连续突发长度:4,8
子类别:DRAMs最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
宽度:11 mmBase Number Matches:1

K4N51163QC-ZC250 数据手册

 浏览型号K4N51163QC-ZC250的Datasheet PDF文件第2页浏览型号K4N51163QC-ZC250的Datasheet PDF文件第3页浏览型号K4N51163QC-ZC250的Datasheet PDF文件第4页浏览型号K4N51163QC-ZC250的Datasheet PDF文件第5页浏览型号K4N51163QC-ZC250的Datasheet PDF文件第6页浏览型号K4N51163QC-ZC250的Datasheet PDF文件第7页 
512M gDDR2 SDRAM  
K4N51163QC  
512Mbit gDDR2 SDRAM  
Revision 1.8  
October 2006  
Notice  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL  
INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar  
applications where Product failure could result in loss of life or personal or physical harm, or any military or  
defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev 1.8 Oct. 2006  
- 1 -  

与K4N51163QC-ZC250相关器件

型号 品牌 获取价格 描述 数据表
K4N51163QC-ZC2A SAMSUNG

获取价格

512Mbit gDDR2 SDRAM
K4N51163QC-ZC2A0 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4N51163QC-ZC2AT SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84
K4N51163QC-ZC33 SAMSUNG

获取价格

512Mbit gDDR2 SDRAM
K4N51163QC-ZC330 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.47ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4N51163QC-ZC33T SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.47ns, CMOS, PBGA84
K4N51163QC-ZC36 SAMSUNG

获取价格

512Mbit gDDR2 SDRAM
K4N51163QC-ZC360 SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
K4N51163QC-ZC36T SAMSUNG

获取价格

DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84
K4N51163QE-ZC20 SAMSUNG

获取价格

Cache DRAM Module, 32MX16, 0.35ns, CMOS, PBGA84