是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FBGA, BGA54,9X9,32 |
Reach Compliance Code: | compliant | 风险等级: | 5.92 |
Is Samacsys: | N | 最长访问时间: | 7 ns |
最大时钟频率 (fCLK): | 111 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | S-PBGA-B54 |
内存密度: | 67108864 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 湿度敏感等级: | 1 |
端子数量: | 54 | 字数: | 4194304 words |
字数代码: | 4000000 | 最高工作温度: | 70 °C |
最低工作温度: | -25 °C | 组织: | 4MX16 |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA54,9X9,32 |
封装形状: | SQUARE | 封装形式: | GRID ARRAY, FINE PITCH |
峰值回流温度(摄氏度): | 225 | 电源: | 1.8 V |
认证状态: | Not Qualified | 刷新周期: | 4096 |
连续突发长度: | 1,2,4,8,FP | 最大待机电流: | 0.0003 A |
子类别: | DRAMs | 最大压摆率: | 0.05 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4M64163PK-RF1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 |
![]() |
K4M64163PK-RF75 | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
![]() |
K4M64163PK-RF750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, FBGA-54 |
![]() |
K4M64163PK-RF90 | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
![]() |
K4M64163PK-RF900 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 |
![]() |
K4M64163PK-RG1L | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
![]() |
K4M64163PK-RG75 | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
![]() |
K4M64163PK-RG750 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54, FBGA-54 |
![]() |
K4M64163PK-RG90 | SAMSUNG |
获取价格 |
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
![]() |
K4M64163PK-RG900 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 |
![]() |