Datasheet > K4M56323PG-FHE/G90

K4M56323PG-FHE/G90

更新时间： 2024-11-11 03:31:59

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
12页	145K
描述
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K4M56323PG-FHE/G90 数据手册

浏览型号K4M56323PG-FHE/G90的Datasheet PDF文件第2页

浏览型号K4M56323PG-FHE/G90的Datasheet PDF文件第3页

浏览型号K4M56323PG-FHE/G90的Datasheet PDF文件第4页

浏览型号K4M56323PG-FHE/G90的Datasheet PDF文件第5页

浏览型号K4M56323PG-FHE/G90的Datasheet PDF文件第6页

浏览型号K4M56323PG-FHE/G90的Datasheet PDF文件第7页

K4M56323PG-F(H)E/G/C/F

Mobile-SDRAM

2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA

FEATURES

GENERAL DESCRIPTION

• 1.8V power supply.

The K4M56323PG is 268,435,456 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,

fabricated with SAMSUNG’s high performance CMOS technol-

ogy. Synchronous design allows precise cycle control with the

use of system clock and I/O transactions are possible on every

clock cycle. Range of operating frequencies, programmable

burst lengths and programmable latencies allow the same

device to be useful for a variety of high bandwidth and high per-

formance memory system applications.

• LVCMOS compatible with multiplexed address.

• Four banks operation.

• MRS cycle with address key programs.

-. CAS latency (1, 2 & 3).

-. Burst length (1, 2, 4, 8 & Full page).

-. Burst type (Sequential & Interleave).

• EMRS cycle with address key programs.

• All inputs are sampled at the positive going edge of the system

clock.

• Burst read single-bit write operation.

• Special Function Support.

-. PASR (Partial Array Self Refresh).

-. Internal TCSR (Temperature Compensated Self Refresh)

-. DS (Driver Strength)

-. DPD (Deep Power Down)

• DQM for masking.

• Auto refresh.

• 64ms refresh period (4K cycle).

• Commercial Temperature Operation (-25°C ~ 70°C).

• Extended Temperature Operation (-25°C ~ 85°C).

• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).

ORDERING INFORMATION

Part No.

Max Freq.

Interface

Package

K4M56323PG-F(H)E/G/C/F75

K4M56323PG-F(H)E/G/C/F90

K4M56323PG-F(H)E/G/C/F1L

133MHz(CL=3), 83MHz(CL2)

111MHz(CL=3), 83MHz(CL2)

90 FBGA Pb

(Pb Free)

LVCMOS

111MHz(CL=3)^*1, 66MHz(CL2)

- F(H)E/G : Normal/ Low Power, Extended Temperature(-25°C ~ 85°C)

- F(H)C/F : Normal/ Low Power, Commercial Temperature(-25°C ~ 70°C)

NOTES :

1. In case of 40MHz Frequency, CL1 can be supported.

Address configuration

Organization

Bank

Row

Column Address

8Mx32

BA0,BA1

A0 - A11

A0 - A8

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-

VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could

result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-

visions may apply.

January 2006

12 3 4 5 6 7...12

中文翻译

下载PDF

与K4M56323PG-FHE/G90相关器件

型号	品牌	获取价格	描述	数据表
K4M641633K-BF1HT	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M641633K-BF1L	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M641633K-BF1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M641633K-BF75T	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54
K4M641633K-BG1H0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M641633K-BG1L	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M641633K-BG1L0	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M641633K-BG1LT	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54
K4M641633K-BG750	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54
K4M641633K-BG75T	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54

与K4M56323PG-FHE/G90相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

K4M56323PG-FHE/G90

K4M56323PG-FHE/G90 数据手册

与K4M56323PG-FHE/G90相关器件

与K4M56323PG-FHE/G90相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K4M56323PG-FHE/G90

K4M56323PG-FHE/G90 数据手册

与K4M56323PG-FHE/G90相关器件

与K4M56323PG-FHE/G90相关文章

您还可以找

您在本页遇到什么问题？