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K4M56323LG-FL750 PDF预览

K4M56323LG-FL750

更新时间: 2024-11-11 20:10:43
品牌 Logo 应用领域
三星 - SAMSUNG 时钟动态存储器内存集成电路
页数 文件大小 规格书
12页 143K
描述
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90

K4M56323LG-FL750 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA90,9X15,32
针数:90Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.24
风险等级:5.9访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:R-PBGA-B90
长度:13 mm内存密度:268435456 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:32
功能数量:1端口数量:1
端子数量:90字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:-25 °C
组织:8MX32封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA90,9X15,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):240电源:2.5 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.16 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

K4M56323LG-FL750 数据手册

 浏览型号K4M56323LG-FL750的Datasheet PDF文件第2页浏览型号K4M56323LG-FL750的Datasheet PDF文件第3页浏览型号K4M56323LG-FL750的Datasheet PDF文件第4页浏览型号K4M56323LG-FL750的Datasheet PDF文件第5页浏览型号K4M56323LG-FL750的Datasheet PDF文件第6页浏览型号K4M56323LG-FL750的Datasheet PDF文件第7页 
K4M56323LG - F(H)N/G/L/F  
Mobile-SDRAM  
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA  
FEATURES  
GENERAL DESCRIPTION  
• VDD/VDDQ = 2.5V/2.5V  
The K4M56323LG is 268,435,456 bits synchronous high data  
rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,  
fabricated with SAMSUNG’s high performance CMOS technol-  
ogy. Synchronous design allows precise cycle control with the  
use of system clock and I/O transactions are possible on every  
clock cycle. Range of operating frequencies, programmable  
burst lengths and programmable latencies allow the same  
device to be useful for a variety of high bandwidth and high per-  
formance memory system applications.  
• LVCMOS compatible with multiplexed address.  
• Four banks operation.  
• MRS cycle with address key programs.  
-. CAS latency (1, 2 & 3).  
-. Burst length (1, 2, 4, 8 & Full page).  
-. Burst type (Sequential & Interleave).  
• EMRS cycle with address key programs.  
• All inputs are sampled at the positive going edge of the system  
clock.  
• Burst read single-bit write operation.  
• Special Function Support.  
-. PASR (Partial Array Self Refresh).  
-. Internal TCSR (Temperature Compensated Self Refresh)  
• DQM for masking.  
• Auto refresh.  
• 64ms refresh period (4K cycle).  
• Commercial Temperature Operation (-25°C ~ 70°C).  
• Extended Temperature Operation (-25°C ~ 85°C).  
• 90Balls FBGA ( -FXXX -Pb, -HXXX -Pb Free).  
ORDERING INFORMATION  
Part No.  
Max Freq.  
Interface  
Package  
K4M56323LG-F(H)N/G/L/F60  
K4M56323LG-F(H)NG/L/F75  
166MHz(CL=3)  
90 FBGA Pb  
(Pb Free)  
LVCMOS  
133MHz(CL=3), 111MHz(CL=2)  
133MHz(CL=3), 83MHz(CL=2)  
K4M56323LG-F(H)N/G/L/F7L*1  
- F(H)N/G : Low Power, Extended Temperature(-25°C ~ 85°C)  
- F(H)L/F : Low Power, Commercial Temperature(-25°C ~ 70°C)  
NOTES :  
1. In case of 40MHz Frequency, CL1 can be supported.  
Address configuration  
Organization  
Bank  
Row  
Column Address  
8Mx32  
BA0,BA1  
A0 - A11  
A0 - A8  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-  
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could  
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-  
visions may apply.  
February 2006  

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