是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
Is Samacsys: | N | 最长访问时间: | 7 ns |
最大时钟频率 (fCLK): | 105 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | R-PBGA-B90 |
内存密度: | 268435456 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 32 | 端子数量: | 90 |
字数: | 8388608 words | 字数代码: | 8000000 |
最高工作温度: | 70 °C | 最低工作温度: | -25 °C |
组织: | 8MX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA90,9X15,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
刷新周期: | 4096 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.0012 A | 子类别: | DRAMs |
最大压摆率: | 0.3 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4M563233E-EL1H0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4M563233E-EL1L0 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4M563233E-EL75 | SAMSUNG |
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Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | |
K4M563233E-EL750 | SAMSUNG |
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Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4M563233E-EL800 | SAMSUNG |
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Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4M563233E-EN1H0 | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4M563233E-EN1L | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 | |
K4M563233E-EN1L0 | SAMSUNG |
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Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 | |
K4M563233E-EN75 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | |
K4M563233E-EN800 | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX32, 6ns, CMOS, PBGA90, LEAD FREE, FBGA-90 |