是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.56 | 最长访问时间: | 0.75 ns |
最大时钟频率 (fCLK): | 133 MHz | I/O 类型: | COMMON |
交错的突发长度: | 2,4,8 | JESD-30 代码: | R-PDSO-G66 |
JESD-609代码: | e6 | 内存密度: | 536870912 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 4 |
湿度敏感等级: | 3 | 端子数量: | 66 |
字数: | 134217728 words | 字数代码: | 128000000 |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 128MX4 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSSOP |
封装等效代码: | TSSOP66,.46 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 峰值回流温度(摄氏度): | 260 |
电源: | 2.5 V | 认证状态: | Not Qualified |
刷新周期: | 8192 | 连续突发长度: | 2,4,8 |
最大待机电流: | 0.005 A | 子类别: | DRAMs |
最大压摆率: | 0.325 mA | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Bismuth (Sn/Bi) |
端子形式: | GULL WING | 端子节距: | 0.635 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4H510438D-UCB00 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | |
K4H510438D-UCB0T | SAMSUNG |
获取价格 |
Cache DRAM Module, 128MX4, 0.75ns, CMOS, PDSO66 | |
K4H510438D-UCB30 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX4, 0.7ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | |
K4H510438D-ULA20 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | |
K4H510438D-ULA2T | SAMSUNG |
获取价格 |
Cache DRAM Module, 128MX4, 0.75ns, CMOS, PDSO66 | |
K4H510438D-ULB0 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66 | |
K4H510438D-ULB00 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX4, 0.75ns, CMOS, PDSO66, ROHS COMPLIANT, TSOP2-66 | |
K4H510438D-ULB0T | SAMSUNG |
获取价格 |
Cache DRAM Module, 128MX4, 0.75ns, CMOS, PDSO66 | |
K4H510438D-ZCB3 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX4, 0.7ns, CMOS, PBGA60, | |
K4H510438D-ZCCC0 | SAMSUNG |
获取价格 |
DDR DRAM, 128MX4, 0.65ns, CMOS, PDSO60, ROHS COMPLIANT, TSOP2-60 |