是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | TBGA, | 针数: | 144 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.28 | 风险等级: | 5.92 |
Is Samacsys: | N | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 0.6 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B144 | JESD-609代码: | e0 |
长度: | 15.5 mm | 内存密度: | 301989888 bit |
内存集成电路类型: | DDR DRAM | 内存宽度: | 36 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 144 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | |
组织: | 8MX36 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, THIN PROFILE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 2.625 V |
最小供电电压 (Vsup): | 2.375 V | 标称供电电压 (Vsup): | 2.5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K4C89363AF-GCF6 | SAMSUNG |
获取价格 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM | |
K4C89363AF-GCF60 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, 1 MM PITCH, FBGA-144 | |
K4C89363AF-GCFB | SAMSUNG |
获取价格 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM | |
K4C89363AF-GCFB0 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, 1 MM PITCH, FBGA-144 | |
K4C89363AF-GCG70 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-GIF50 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.6ns, CMOS, PBGA144, 1 MM PITCH, FBGA-144 | |
K4C89363AF-GIF60 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-GIFB0 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-GIG70 | SAMSUNG |
获取价格 |
DDR DRAM, 8MX36, 0.5ns, CMOS, PBGA144, FBGA-144 | |
K4C89363AF-TCF5 | SAMSUNG |
获取价格 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM |