5秒后页面跳转
K3N6C1000F-GC15 PDF预览

K3N6C1000F-GC15

更新时间: 2024-09-21 19:54:23
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
3页 59K
描述
MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44

K3N6C1000F-GC15 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP, SOP44,.63
针数:44Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:150 ns
备用内存宽度:8JESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:28.5 mm
内存密度:33554432 bit内存集成电路类型:MASK ROM
内存宽度:16功能数量:1
端子数量:44字数:2097152 words
字数代码:2000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX16封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP44,.63
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:5 V认证状态:Not Qualified
座面最大高度:3.1 mm最大待机电流:0.00005 A
子类别:MASK ROMs最大压摆率:0.05 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:12.6 mm
Base Number Matches:1

K3N6C1000F-GC15 数据手册

 浏览型号K3N6C1000F-GC15的Datasheet PDF文件第2页浏览型号K3N6C1000F-GC15的Datasheet PDF文件第3页 
K3N6C1000F-GC  
CMOS MASK ROM  
32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
4,194,304x8(byte mode)  
2,097,152x16(word mode)  
· Fast access time  
100ns(Max.) : CL=50pF  
120ns(Max.) : CL=100pF  
· Supply voltage : single +5V  
· Current consumption  
Operating : 50mA(Max.)  
Standby : 50mA(Max.)  
· Fully static operation  
The K3N6C1000F-GC is a fully static mask programmable  
ROM fabricated using silicon gate CMOS process technology,  
and is organized either as 4,194,304x8 bit(byte mode) or as  
2,097,152x16 bit(word mode) depending on BHE voltage  
level.(See mode selection table)  
This device operates with a 5V single power supply, and all  
inputs and outputs are TTL compatible.  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
· All inputs and outputs TTL compatible  
· Three state outputs  
The K3N6C1000F-GC is packaged in a 44-SOP.  
· Package  
-. K3N6C1000F-GC : 44-SOP-600  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
A20  
X
MEMORY CELL  
MATRIX  
BUFFERS  
AND  
.
.
.
.
.
.
.
.
N.C  
A18  
A20  
A19  
A8  
1
2
44  
43  
42  
41  
(2,097,152x16/  
4,194,304x8)  
DECODER  
A17  
A7  
3
4
A9  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
5
40 A10  
6
A11  
39  
Y
SENSE AMP.  
BUFFERS  
38 A12  
37 A13  
7
BUFFERS  
AND  
8
A14  
36  
9
DECODER  
A0  
A15  
35  
10  
11  
A-1  
A16  
34  
33  
SOP  
CE 12  
BHE  
.
.
.
VSS  
13  
32 VSS  
OE  
Q0  
Q8  
Q1  
Q9  
14  
15  
16  
17  
18  
19  
Q15/A-1  
31  
30  
29  
28  
27  
26  
25  
24  
23  
CE  
Q7  
Q0/Q8  
Q7/Q15  
CONTROL  
LOGIC  
Q14  
Q6  
OE  
BHE  
Q13  
Q5  
Q2  
Q10 20  
Q12  
Q4  
Q3  
21  
22  
Pin Name  
A0 - A20  
Pin Function  
Address Inputs  
Data Outputs  
Q11  
VCC  
Q0 - Q14  
K3N6C1000F-GC  
Output 15(Word mode)/  
LSB Address(Byte mode)  
Q15 /A-1  
BHE  
CE  
Word/Byte selection  
Chip Enable  
OE  
Output Enable  
Power (+5V)  
Ground  
VCC  
VSS  
N.C  
No Connection  

与K3N6C1000F-GC15相关器件

型号 品牌 获取价格 描述 数据表
K3N6C1000F-TC120 SAMSUNG

获取价格

MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6C1000F-TC15 SAMSUNG

获取价格

MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6C1000F-TC150 SAMSUNG

获取价格

MASK ROM, 2MX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K3N6C1200C-TE12 SAMSUNG

获取价格

MASK ROM, 4MX8, 120ns, CMOS, PDSO44, TSOP2-44
K3N6C1500C-TC15 SAMSUNG

获取价格

MASK ROM, 4MX8, 150ns, CMOS, PDSO44, TSOP2-44
K3N6C1500C-TE15 SAMSUNG

获取价格

MASK ROM, 4MX8, 150ns, CMOS, PDSO44, TSOP2-44
K3N6C3000C-DC10 SAMSUNG

获取价格

MASK ROM, 4MX8, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42
K3N6C3000C-DC12 SAMSUNG

获取价格

MASK ROM, 4MX8, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42
K3N6C3000C-DC15 SAMSUNG

获取价格

MASK ROM, 4MX8, 150ns, CMOS, PDIP42, 0.600 INCH, DIP-42
K3N6C3000E-DC10 SAMSUNG

获取价格

MASK ROM, 4MX8, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42