Datasheet > K3296

K3296

更新时间： 2024-11-02 21:54:35

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描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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K3296 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3296

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

ORDERING INFORMATION

DESCRIPTION

The 2SK3296 is N-Channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

PART NUMBER

2SK3296

PACKAGE

TO-220AB

2SK3296-S

2SK3296-ZK

2SK3296-ZJ

TO-262

TO-263(MP-25ZK)

TO-263(MP-25ZJ)

FEATURES

• 4.5 V drive available

• Low on-state resistance

DS(on)1

= 12 mΩ MAX. (V = 10 V, I = 18 A)

• Low gate charge

Q = 30 nC TYP. (I = 35 A, V = 16 V, V = 10 V)

• Built-in gate protection diode

• Surface mount device available

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

DSS

Drain to Source Voltage (V = 0 V)

GSS

Gate to Source Voltage (V = 0 V)

D(DC)

D(pulse)

Drain Current (DC) (T = 25°C)

140

Drain Current (Pulse) ^Note

Total Power Dissipation (T = 25°C)

1.5

°C

Total Power Dissipation (T = 25°C)

Channel Temperature

Storage Temperature

150

stg

−55 to +150

Note PW ≤ 10 µs, Duty Cycle ≤ 1%

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published May 2001 NS CP(K)

Printed in Japan

D14063EJ2V0DS00 (2nd edition)

The mark shows major revised points.

1999, 2000

12 3 4 5 6 7 8

中文翻译

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