MUR3020CTD thru MUR3060CTD
Pb
MUR3020CTD/MUR3040CTD/MUR3060CTD
Pb Free Plating Product
30 Ampere Heatsink Dual Doubler Polarity Ultra Fast Recovery Half Bridge Rectifiers
Unit : inch (mm)
TO-220AB/TO-220-3L
Features
.419(10.66)
.387(9.85)
.196(5.00)
.163(4.16)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Latest P/G technology with ultra fast recovery time
Low forward voltage drop
.139(3.55)
MIN
.054(1.39)
.045(1.15)
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
.038(0.96)
.019(0.50)
.025(0.65)MAX
Mechanical Data
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB
.1(2.54)
.1(2.54)
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Doubler
Series
Negative
Positive
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Weight: 2.2 gram approximately
Suffix "CT"
Suffix "CTA"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MUR3020CTD MUR3040CTD MUR3060CTD
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
30.0
300
1.3
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
Maximum Instantaneous Forward Voltage
@ 15.0 A
VF
IR
0.98
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
5
100
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35-50
150
pF
oC
Operating Junction and Storage
Temperature Range
T
J, TSTG
-55 to +150
.
= 0.5A I = 1 0A Irr = 0.25A.
F R
NOTES : (1) Reverse recovery test conditions I
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.