Datasheet > K2611SB

K2611SB

更新时间： 2022-04-01 10:12:23

品牌	Logo	应用领域
稳先微 - WINSEMI		/
页数	文件大小	规格书
7页	703K
描述
Silicon N-Channel MOSFET

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K2611SB 数据手册

K2611SB

Silicon N-Channel MOSFET

Features

■ 9A,900V, R_DS(on)(Max1.35Ω)@V_GS=10V

■ Ultra-low Gate charge(Typical 58nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

General Description

This N-Channel enhancement mode power field effect transistors

are produced using Winsemi's proprietary, planar stripe ,DMOS

technology. This advanced technology has been especially tailored

to minimize on-state resistance

, provide superior switching

performance, and withstand high energy pulse in the avalanche and

commutation mode. These devices are well suited for high efficiency

switch mode power supplies.

Absolute Maximum Ratings

Symbol

Parameter

Value

900

Units

V_DSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

Continuous Drain Current(@Tc=100℃)

Drain Current Pulsed

I_D

5.7

I_DM

V_GS

E_AS

(Note1)

Gate to Source Voltage

±30

663

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv /dt

Total Power Dissipation(@Tc=25℃)

Derating Factor above 25℃

Junction and Storage Temperature

Channel Temperature

(Note2)

(Note1)

(Note3)

V/ ns

E_AR

dv/dt

4.5

276

2.22

-55~150

300

P_D

W/℃

℃

T_J,T_stg

T_L

℃

Thermal Characteristics

Value

Symbol

Parameter

Units

Min

Typ

Max

0.45

R_QJC

R_QJA

Thermal Resistance , Junction -to -Case

Thermal Resistance , Junction-to -Ambient

℃/W

Rev.A Oct.2010

12 3 4 5 6 7

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