Datasheet > K2501GLRP

K2501GLRP

更新时间： 2024-02-06 20:18:20

品牌	Logo	应用领域
力特 - LITTELFUSE		双向触发二极管
页数	文件大小	规格书
6页	740K
描述
SIDAC

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技术参数
数据手册

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K2501GLRP 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.68
触发设备类型：	SIDAC	Base Number Matches：	1

K2501GLRP 数据手册

Teccor^®brandThyristors

Standard Bidirectional SIDACs

RoHS

Kxxx1GL Series

Description

The Multipulse^™SIDAC is a voltage switch used in Metal-

Halide lamp ignition circuits, as well as High Pressure

Sodium lamp ignition circuits for outdoor street and area

lighting. This robust solid-state switch is designed to handle

lamp igniter applications requiring operation at ambient

temperatures up to 90°C where igniter circuit components

can raise SIDAC junction temperature up to 125°C, especially

when the lamp element is removed or ruptured. Its excellent

commutation time (t

) makes this robust product best

suited for producing ^Cm^OMu^Mltiple pulses in each half cycle of

50/60 Hz line voltage. The Multipulse^™SIDAC is offered in a

DO-15 axial leaded package.

Kxxx1GL SIDAC has a repetitive off-state blocking voltage

(V_DRM) of 180V to 270V minimum depending actual device

type. Blocking capability is ensured by glass passivated

junctions for best reliability. The package is epoxy

encapsulated with tin plated copper alloy leads.

Schematic Symbol

Features

• AC circuit oriented

• RoHS Compliant

•Triggering Voltage of 200

to 380V

Applications

Typical application circuit presented in Figure 10 of this data

sheet (Typical Metal Halide Ignitor Circuit).

Electrical Speciﬁcations

Symbol

V_T

Parameters

Test Conditions

Min

Max

Unit

On-state Voltage

IT=1A

TA=25 °C

I_TRM

Peak Non-Repetitive Surge Current

Breakover/Trigger Voltage

Pulse Wave = 10μs,

Sine Wave, f=120Hz

K2201GL

K2401GL

K2501GL

K3601GL

K2201GL

K2401GL

K2501GL

K3601GL

50/60Hz

200

220

240

348

180

190

200

270

230

250

265

380

V_BO

V_DRM

Repetitive Peak Off-State Voltage

I_T(RMS)

I_H

On-State RMS Current, T_J< 125ºC

Sine Wave

50/60Hz

Sine Wave

Dynamic Holding Current, R=100 Ω

30TYP

(V_BO– V_S)

________

50/60Hz

Sine Wave

R_S

Switching Resistance, R_S=

100

(I_S– I_BO

CommutationTimeT_J< 125ºC

Breakover Current

)

See test circuit and

waveform in Figure 9

50/60Hz

t_COMM

100

μsec

I_BO

Sine Wave

60Hz

50Hz

20.0

16.7

150

I_TSM

Non-repetitive 1 cycle On-State peak value

di/dt

dv/dt

T_S

Critical Rate of Rise of On-State Current

Critical Rate of Rise of Off-State Voltage

StorageTemperature Range

A/μsec

V/μsec

°C

1500

+125

-40

Specifications are subject to change without notice.

Revised: 03/25/16

12 3 4 5 6

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