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K2400GH PDF预览

K2400GH

更新时间: 2024-10-28 15:35:59
品牌 Logo 应用领域
力特 - LITTELFUSE 双向触发二极管
页数 文件大小 规格书
10页 251K
描述
SIDAC, 250V V(BO) Max, DO-15, ROHS COMPLIANT, PLASTIC PACKAGE-2

K2400GH 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-15包装说明:LONG FORM, O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.30.00.80
风险等级:5.55最大转折电压:250 V
最小转折电压:220 V外壳连接:ISOLATED
配置:SINGLE最大维持电流:150 mA
标称维持电流:150 mAJEDEC-95代码:DO-15
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):260
认证状态:Not Qualified子类别:Silicon Surge Protectors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:40触发设备类型:SIDAC
Base Number Matches:1

K2400GH 数据手册

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to 280V  
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Teccor® brandThyristors  
High Energy Bidirectional SIDACs  
Kxxx0yH Series  
Description  
The new Kxxx0yH is a higher energy SIDAC switch for gas  
ignition applications requiring higher current pulse current  
especially at low repetition rate. It is offered in a DO-15 and  
TO-92 leaded packages as well as DO-214 surface mount  
package. Voltage activation of this solid state switch is  
accomplished with peak voltage level of 190 to 280Volts. The  
SIDAC is a silicon bilateral voltage triggeredThyristor switch  
that switches on through a negative resistance region to a  
low on-state voltage. Conduction will continue until current  
is interrupted or lowered below minimum holding current of  
the device.  
Features  
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Schematic Symbol  
Capability  
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Applications  
Suitable for high voltage power supplies, natural gas  
igniters, and Xenon flash ignition.  
Electrical Specifications (T = 25°C, unless otherwise specified)  
J
Symbol  
Parameters  
Test Conditions  
Min  
Max  
Unit  
K2000yH  
K2200yH  
K2400yH  
K2500yH  
K2000yH  
K2200yH  
K2400yH  
K2500yH  
190  
205  
220  
240  
180  
180  
190  
200  
215  
230  
250  
280  
VBO  
Breakover/Trigger Voltage  
V
VDRM  
Repetitive Peak Off-state Voltage  
V
IT(RMS)  
VTM  
50/60Hz, T < 125°C  
On-state RMS Current  
Peak On-state Voltage  
1
1.5  
A
V
J
IT = 1A  
RL = 100Ω  
50/60Hz Sine Wave  
IH  
Dynamic Holding Current  
150  
100  
mA  
(VBO – VS)  
________  
RS  
Switching Resistance, RS=  
50/60Hz Sine Wave  
8
(IS – IBO  
)
IBO  
Breakover Current  
50/60Hz Sine Wave  
60Hz  
50  
μA  
A
120  
280  
150  
Peak Repetitive Pulse Current  
(refer to figure 4)  
ITRM  
di/dt  
tp = 10μs  
5Hz  
Critical Rate of Rise of On-State Current  
Critical Rate of Rise of Off-State Voltage  
StorageTemperature Range  
A/μs  
V/μs  
°C  
dv/dt  
TS  
1500  
-40  
-40  
150  
125  
18  
30  
35  
T
JunctionTemperature Range  
°C  
J
DO-15  
DO-214  
DO-92  
RRJL  
RRJC  
Thermal Resistance, Junction to Lead  
Thermal Resistance, Junction to Case  
°C/W  
°C/W  
DO-15  
DO-92  
75  
95  
RRJA  
Thermal Resistance, Junction to Ambient  
°C/W  
Note: xxx - voltage, y = package  
Kxxx0yH Series  
©2008 Littelfuse, Inc.  
321  
Revised: August 29, 2008  
Specifications are subject to change without notice.  
Please refer to http://www.littelfuse.com for current information.  

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