Datasheet > K1B5616B2M000000

K1B5616B2M000000

更新时间： 2024-09-17 19:30:31

品牌	Logo	应用领域
三星 - SAMSUNG		内存集成电路
页数	文件大小	规格书
42页	1292K
描述
Pseudo Static RAM, 16MX16, 70ns, CMOS, DIE

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K1B5616B2M000000 技术参数

Preliminary

K1B5616B2M

UtRAM

256Mb (16M x 16 bit) UtRAM

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Revision 1.0

May 2006

- 1 -

12 3 4 5 6 7...42

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型号	品牌	获取价格	描述	数据表
K1B5616B2M-K1700	SAMSUNG	获取价格	DRAM
K1B5616B2M-K2700	SAMSUNG	获取价格	DRAM
K1B5616B2M-K3700	SAMSUNG	获取价格	DRAM
K1B5616B2M-W1700	SAMSUNG	获取价格	DRAM
K1B5616B2M-W2700	SAMSUNG	获取价格	DRAM
K1B5616B2M-W3700	SAMSUNG	获取价格	DRAM
K1B5616BAM	SAMSUNG	获取价格	DRAM
K1B6416B2D-BI700	SAMSUNG	获取价格	Memory IC, 4MX16, CMOS, PBGA54
K1B6416B2D-FI700	SAMSUNG	获取价格	Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA54, 6 X 8 MM, 0.75 PITCH, FBGA-48
K1B6416B2D-FI70T	SAMSUNG	获取价格	Memory IC, 4MX16, CMOS, PBGA54