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K1713_04 PDF预览

K1713_04

更新时间: 2024-10-27 03:46:39
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HAMAMATSU /
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描述
Two-color detector

K1713_04 数据手册

 浏览型号K1713_04的Datasheet PDF文件第2页浏览型号K1713_04的Datasheet PDF文件第3页 
U V T O I R D E T E C T O R  
Two-color detector  
K1713/K3413-01 -02  
,
Broad spectral response range from UV through IR  
K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared  
detector element. This structure allows you to design instruments using the same optical path from UV through IR.  
Features  
Applications  
Broad spectral response  
Suitable for spectrophotometers, flame monitors, etc.  
Spectrophotometers  
Laser monitors  
Noncooled type:  
Flame monitors  
Room temperature operation for easy handling  
One-stage thermoelectrically cooled type:  
Keeps the detector temperature at a constant level to  
make high-precision measurements.  
Radiation thermometers  
Accessories (Optional)  
Heatsink for thermoelectrically cooled type  
A3179-03  
Temperature controller for thermoelectrically cooled type  
C1103-04  
Photosensor amplifier  
C2719  
Amplifier for PbS and PbSe detectors  
C3757-02  
General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Di mensional  
outline/  
Operating  
Storage  
Active  
Thermistor TE-cooler Reverse  
allowable allowable voltage  
temperature temperature  
Type No.  
Package Cooling  
Detector area size  
Wi ndow  
R
dissipation current  
V
Topr  
(°C)  
Tstg  
(°C)  
1
m aterial  
*
(mm)  
(mW)  
(A)  
(V)  
Si  
PbS1.8  
Si  
PbSe  
Si  
PbS1.8  
Si  
PbSe  
2.4 × 2.4  
×
2.4 × 2.4  
1.8 × 1.8  
2.4 × 2.4  
×
5
K1713-01  
2
1.8  
100  
*
Non-  
cooled  
/STO-5  
/STO-8  
-
-
5
K1713-02  
K3413-01  
K3413-02  
100 *2  
-30 to +50  
-55 to +50  
5
2
1.8  
100  
*
One-stage  
TE-cooled  
0.2  
1.5  
2.4 × 2.4  
1.8 × 1.8  
5
100 *2  
Electrical and optical characteristics (Typ., unless otherwise noted)  
Measurement  
Rise time  
tr  
R
V =0 V  
Peak  
condition  
Photo sensitivity Shunt resistance  
sensitivity  
wavelength  
λp  
D*  
λ=λp  
S
λ λ  
= p  
or  
Element  
temperature  
T
Type No.  
Detector  
dark resistance  
L
R =1 k  
10 to 90 %  
(µs)  
(cm · Hz1/2/W)  
(°C)  
(µm)  
0.94  
2.2  
0.94  
4.0  
0.94  
3
0.94  
4.1  
(A/W)  
0.45  
(M )  
300  
0.2 to 2  
300  
0.5 to 1.8  
300  
0.5 to 10  
300  
1.5 to 5  
Si  
PbS  
Si  
PbSe  
Si  
PbS-10  
Si  
PbSe  
1.4 × 1013  
0.2 *4  
K1713-01  
25  
25  
6 × 104 (V/W)  
0.45  
5 × 1010  
*
200 Max. *5  
0.2 *4  
3
1.4 × 1013  
5 × 108 *3  
K1713-02  
K3413-01  
K3413-02  
5 × 102 (V/W)  
0.45  
3 Max. *5  
0.2 *4  
25  
2.4  
25  
1.4 × 1013  
3
×
5 (V/W)10  
1 × 1011  
*
600 Max. *5  
0.2 *4  
0.45  
1.4 × 1013  
1 × 109 *3  
-10  
1.5 × 103 (V/W)  
5 Max. *5  
*1: Window material S: sapphire glass  
*2: Maximum supply voltage  
*3: Light source 500 K black body  
Chopping frequency: 600 Hz,  
Noise bandwidth: 60 Hz  
*4: λ=655 nm  
Supply voltage: 15 V  
Load resistance: nearly equal to element dark resistance  
Input energy: 4.8 µW/cm2 (PbSe: 16.7 µW/cm2)  
*5: 0 to 63 %  
1

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