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K1713 PDF预览

K1713

更新时间: 2024-10-26 22:32:43
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HAMAMATSU /
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描述
Two-color detector

K1713 数据手册

 浏览型号K1713的Datasheet PDF文件第2页浏览型号K1713的Datasheet PDF文件第3页 
U V T O I R D E T E C T O R  
Two-color detector  
,
K1713/K3413-01 -02  
Broad spectral response range from UV through IR  
K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared  
detector element. This structure allows you to design instruments using the same optical path from UV through IR.  
Features  
Applications  
Broad spectral response  
Suitable for spectrophotometers, flame monitors, etc.  
Noncooled type:  
Spectrophotometers  
Laser monitors  
Flame monitors  
Room temperature operation for easy handling  
One-stage thermoelectrically cooled type:  
Keeps the detector temperature at a constant level to  
make high-precision measurements.  
Radiation thermometers  
Accessories (Optional)  
Heatsink for thermoelectrically cooled type  
A3179-03  
Temperature controller for thermoelectrically cooled type  
C1103-04  
Photosensor amplifier  
C2719  
Amplifier for PbS and PbSe detectors  
C3757-02  
General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
outline/  
Operating Storage  
temperature temperature  
Active  
Detector area size  
Thermistor TE-cooler Reverse  
allowable allowable voltage  
Type No.  
Package Cooling  
Window  
dissipation current  
(A)  
VR  
(V)  
Topr  
(°C)  
Tstg  
(°C)  
1
material  
*
(mm)  
(mW)  
Si  
PbS  
Si  
2.4 × 2.4  
1.8 × 1.8  
2.4 × 2.4  
1.8 × 1.8  
2.4 × 2.4  
1.8 × 1.8  
2.4 × 2.4  
1.8 × 1.8  
5
K1713-01  
100 *2  
5
Non-  
TO-5  
/S  
/S  
-
-
cooled  
K1713-02  
K3413-01  
K3413-02  
PbSe  
Si  
100 *2  
5
-30 to +50 -55 to +50  
PbS  
Si  
100 *2  
5
One-stage  
TO-8  
0.2  
1.5  
TE-cooled  
PbSe  
100 *2  
Electrical and optical characteristics (Typ., unless otherwise noted)  
Measurement  
Rise time  
tr  
VR=0 V  
Peak  
condition  
Photo sensitivity Shunt resistance  
or  
dark resistance  
sensitivity  
wavelength  
lp  
D*  
l=lp  
S
= p  
l l  
Element  
temperature  
T
Type No.  
Detector  
RL=1 k  
10 to 90 %  
(µs)  
W
(cm · Hz1/2/W)  
(°C)  
(µm)  
0.94  
2.2  
(A/W)  
0.45  
(M )  
W
Si  
PbS  
Si  
300  
0.2 to 2  
300  
1.4 × 1013  
0.2 *4  
K1713-01  
25  
25  
6 × 104 (V/W)  
0.45  
5 × 1010  
*
200 Max. *5  
0.2 *4  
3
0.94  
4.0  
1.4 × 1013  
5 × 108 *3  
K1713-02  
K3413-01  
K3413-02  
PbSe  
Si  
5 × 102 (V/W)  
0.45  
0.5 to 1.8  
300  
3 Max. *5  
0.2 *4  
25  
-10  
25  
0.94  
2.4  
1.4 × 1013  
3
PbS  
Si  
3 × 105 (V/W)  
0.45  
0.5 to 10  
300  
1.5 to 5  
1 × 1011  
*
600 Max. *5  
0.2 *4  
0.94  
4.1  
1.4 × 1013  
1 × 109 *3  
PbSe  
-10  
1.5 × 103 (V/W)  
5 Max. *5  
*1: Window material S: sapphire glass  
*2: Maximum supply voltage  
*3: Light source 500 K black body  
Chopping frequency: 600 Hz,  
Noise bandwidth: 60 Hz  
*4: l=655 nm  
Supply voltage: 15 V  
Load resistance: nearly equal to element dark resistance  
Input energy: 4.8 µW/cm2 (PbSe: 16.7 µW/cm2)  
*5: 0 to 63 %  
1

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