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K1351VF640 PDF预览

K1351VF640

更新时间: 2024-02-07 09:55:27
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
11页 312K
描述
Silicon Controlled Rectifier, 2728A I(T)RMS, 6400V V(DRM), 6400V V(RRM), 1 Element

K1351VF640 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.92配置:SINGLE
最大直流栅极触发电流:300 mAJESD-30 代码:O-CXDB-X3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:2728 A
断态重复峰值电压:6400 V重复峰值反向电压:6400 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

K1351VF640 数据手册

 浏览型号K1351VF640的Datasheet PDF文件第2页浏览型号K1351VF640的Datasheet PDF文件第3页浏览型号K1351VF640的Datasheet PDF文件第4页浏览型号K1351VF640的Datasheet PDF文件第5页浏览型号K1351VF640的Datasheet PDF文件第6页浏览型号K1351VF640的Datasheet PDF文件第7页 
Date:- 26 May, 2005  
Data Sheet Issue:- 1  
WESTCODE  
IXYS  
An  
Company  
Provisional Data  
Medium Voltage Thyristor  
Types K1351V#600 to K1351V#650  
(Development part No.: KX120V#600-650)  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
6000-6500  
6000-6500  
6000-6500  
6100-6600  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
IT(RMS)  
IT(d.c.)  
ITSM  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
1351  
A
A
859  
526  
A
2728  
2419  
14.3  
A
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
kA  
kA  
A2s  
A2s  
ITSM2  
15.8  
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
1.02×106  
1.25×106  
75  
I2t  
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
continuous, 50Hz  
repetitive, 50Hz, 60s  
non-repetitive  
(di/dt)cr Critical rate of rise of on-state current (Note 6)  
150  
A/µs  
300  
VRGM  
PG(AV)  
PGM  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
3
W
W
°C  
°C  
40  
Tj op  
-40 to +115  
-40 to +150  
Tstg  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 115°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=115°C.  
Provisional Data Sheet. Type K1351V#600 to K1351V#650 Issue 1  
Page 1 of 11  
May, 2005  

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