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K1351VF600 PDF预览

K1351VF600

更新时间: 2024-09-16 14:56:31
品牌 Logo 应用领域
力特 - LITTELFUSE 开关
页数 文件大小 规格书
13页 897K
描述
中压应用对相控晶闸管提出了更高的要求。 为了满足这些需求,我们开发了一系列针对中压应用和串联运行进行优化的晶闸管。 随着电压的增加,开关损耗和关断时间也会增加,到达一定程度后会在线路频率应用中变得

K1351VF600 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:DISK BUTTON, O-CXDB-X3Reach Compliance Code:not_compliant
风险等级:5.83配置:SINGLE
最大直流栅极触发电流:300 mAJESD-30 代码:O-CXDB-X3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:2728 A
断态重复峰值电压:6000 V重复峰值反向电压:6000 V
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

K1351VF600 数据手册

 浏览型号K1351VF600的Datasheet PDF文件第2页浏览型号K1351VF600的Datasheet PDF文件第3页浏览型号K1351VF600的Datasheet PDF文件第4页浏览型号K1351VF600的Datasheet PDF文件第5页浏览型号K1351VF600的Datasheet PDF文件第6页浏览型号K1351VF600的Datasheet PDF文件第7页 
Medium Voltage Thyristor Type K1351V#600-650  
Date: 6th April 2023  
Data Sheet Issue: 2  
Medium Voltage Thyristor  
Types K1351V#600 to K1351V#650  
(Development part No.: KX120V#600-650)  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
6000-6500  
6000-6500  
6000-6500  
6100-6600  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
1351  
859  
A
A
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
526  
A
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
2728  
2419  
14.3  
A
A
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)  
kA  
kA  
A2s  
A2s  
15.8  
1.02×106  
1.25×106  
75  
I2t  
continuous, 50Hz  
(di/dt)cr Critical rate of rise of on-state current (Note 6)  
repetitive, 50Hz, 60s  
non-repetitive  
150  
A/µs  
300  
VRGM  
PG(AV)  
PGM  
THS  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
3
W
W
°C  
°C  
40  
-40 to +115  
-40 to +150  
Tstg  
Notes: -  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 115°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=115°C.  
Datasheet Type K1351V#600 to K1351V#650 Issue 2  
Page 1  
April 2023  

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