Datasheet > K1197NC280

K1197NC280

更新时间： 2024-11-06 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		开关
页数	文件大小	规格书
12页	676K
描述
中压应用对相控晶闸管提出了更高的要求。为了满足这些需求，我们开发了一系列针对中压应用和串联运行进行优化的晶闸管。随着电压的增加，开关损耗和关断时间也会增加，到达一定程度后会在线路频率应用中变得

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K1197NC280 数据手册

Date:- 21 Jun, 2019

Data Sheet Issue:- 1

WESTCODE

An IXYS Company

Medium Voltage Thyristor

Types K1197NC280 to K1197NC320

Old Type No.: P480CH20-32

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

2800-3200

2900-3300

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current, T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current, T_sink=25°C, (note 2)

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_rm=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm£10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm£10V, (note 5)

Critical rate of rise of on-state current (repetitive), (Note 6)

Critical rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

1197

803

471

2392

2003

10.65

11.7

A²s

A/µs

I_TSM2

I²t

567×10³

684×10³

300

I²t

(di/dt)_cr

600

V_RGM

P_G(AV)

P_GM

Mean forward gate power

Peak forward gate power

T_{j op}

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r£0.5µs, T_case=125°C.

Data Sheet. Types K1197NC280 to K1197NC320 Issue 1

Page 1 of 11

June, 2019

12 3 4 5 6 7...12

中文翻译

下载PDF

与K1197NC280相关器件

型号	品牌	获取价格	描述	数据表
K1197NC300	IXYS	获取价格	Silicon Controlled Rectifier, 2392A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element,
K1197NC320	IXYS	获取价格	Silicon Controlled Rectifier, 2392A I(T)RMS, 3200V V(DRM), 3200V V(RRM), 1 Element,
K1197NC320	LITTELFUSE	获取价格	中压应用对相控晶闸管提出了更高的要求。为了满足这些需求，我们开发了一系列针对中压应用和串
K11A30U	AMPHENOL	获取价格	Ring Terminal, 0.91mm2
K11A34U-2	AMPHENOL	获取价格	Ring Terminal, 0.32mm2
K11A36U-2	AMPHENOL	获取价格	Ring Terminal, 0.39mm2
K11A39U-2	AMPHENOL	获取价格	Ring Terminal, 0.48mm2
K11F1C-P03LPH0-4500	ETC	获取价格	CONN RCPT FMALE 3POS GOLD SOLDER
K11F1C-P03LPH0-5000	ETC	获取价格	CONN RCPT FMALE 3POS GOLD SOLDER
K11F1C-P08LFG0-4500	ETC	获取价格	CONN RCPT FMALE 8POS GOLD SOLDER

与K1197NC280相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

K1197NC280

K1197NC280 数据手册

与K1197NC280相关器件

与K1197NC280相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

K1197NC280

K1197NC280 数据手册

与K1197NC280相关器件

与K1197NC280相关文章

您还可以找

您在本页遇到什么问题？