Datasheet > K1109

K1109

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
2页	70K
描述
N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE

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数据手册

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K1109 数据手册

UTCK1109

JUNCTION FIELD EFFECT TRANSISTOR

N-CHANNEL JFET FOR

ELECTRET CONDENSER

MICROPHONE

DESCRIPTION

The UTC K1109 is N-channel JFET for electret

condenser microphone.

FEATURES

*High gm implies low transfer loss

*Built-in gate-source diode and resistor implies fast

power on settling time

SOT-113

1: SOURCE 2: DRAIN 3: GATE

ABSOLUTE MAXIMUM RATINGS ^{( Operating temperature range applies unless otherwise specified )}

PARAMETER

Drain-Source Voltage

Gate-Drain Voltage

Drain Current

SYMBOL

VDSX

VGDO

TSTG

VALUE

-20

125

-55 ~ +125

UNIT

°C

Gate Current

Total Power Dissipation

Junction Temperature

Storage Temperature

°C

ELECTRICAL CHARACTERISTICS ^{(Tj=25°C, unless otherwise specified)}

PARAMETER

Drain Current

SYMBOL

IDSS

TEST CONDITIONS

VDS=5.0V,VGS=0

MIN TYP MAX UNIT

600

-1.0

µA

µS

Gate Off Voltage

VGS(OFF)

lYFS1l

lYFS2l

Ciss

VDS=5.0V,ID=1.0µA

-0.1

350

Forward Transfer Admittance

Input Capacitance

VDS=5.0V,ID=30µA,f=1kHz

VDS=5.0V, VGS=0,f=1kHz

VDS=5.0V,VGS=0,f=1.0MHz

480

350 1600

7.0

1.8

8.0

3.0

Noise Voltage

CLASSIFICATION OF IDSS

RANK

J34

90-180

J35

150-300

J36

200-450

RANGE

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R210-002,A

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