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JZ48F4000L0ZTQ0 PDF预览

JZ48F4000L0ZTQ0

更新时间: 2024-09-17 19:36:27
品牌 Logo 应用领域
英特尔 - INTEL 内存集成电路闪存
页数 文件大小 规格书
102页 1294K
描述
Flash, 16MX16, 85ns, PBGA88

JZ48F4000L0ZTQ0 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:FBGA, BGA88,8X12,32Reach Compliance Code:unknown
风险等级:5.84最长访问时间:85 ns
启动块:TOP命令用户界面:YES
通用闪存接口:YES数据轮询:NO
JESD-30 代码:R-PBGA-B88内存密度:268435456 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:4,255端子数量:88
字数:16777216 words字数代码:16000000
最高工作温度:85 °C最低工作温度:-25 °C
组织:16MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA88,8X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
页面大小:4 words并行/串行:PARALLEL
电源:1.8,2.5/3 V认证状态:Not Qualified
部门规模:16K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.051 mA
表面贴装:YES技术:CMOS
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:NO类型:NOR TYPE
Base Number Matches:1

JZ48F4000L0ZTQ0 数据手册

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Intel StrataFlash® Wireless Memory  
(L30)  
28F640L30, 28F128L30, 28F256L30  
Datasheet  
Product Features  
High performance Read-While-Write/Erase  
— 85 ns initial access  
Security  
— OTP space:  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— 52 MHz with zero wait state, 17 ns clock-to-  
data output synchronous-burst mode  
— 25 ns asynchronous-page mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Burst suspend  
— Programmable WAIT configuration  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— Absolute write protection: V = GND  
PP  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
Software  
— 1.8 V low-power buffered programming at  
— 20 µs (Typ) program suspend  
7 µs/byte (Typ)  
— 20 µs (Typ) erase suspend  
Architecture  
— Intel® Flash Data Integrator (FDI) optimized  
— Basic Command Set (BCS) and Extended  
Command Set (ECS) compatible  
— Asymmetrically-blocked architecture  
— Multiple 8-Mbit partitions: 64-Mbit and 128-  
Mbit devices  
— Common Flash Interface (CFI) capable  
— Multiple 16-Mbit partitions: 256-Mbit devices  
— Four 16-Kword parameter blocks: top or  
bottom configurations  
Quality and Reliability  
— Expanded temperature: –25° C to +85° C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (0.13 µm)  
Density and Packaging  
— 64-Kword main blocks  
— Dual-operation: Read-While-Write (RWW) or  
Read-While-Erase (RWE)  
— 64-, 128-, and 256-Mbit density in VF BGA  
packages  
— 128/0 and 256/0 Density in Stacked-CSP  
— 16-bit wide data bus  
— Status register for partition and device status  
Power  
— V (core) = 1.7 V - 2.0 V  
CC  
— V  
(I/O) = 2.2 V - 3.3 V  
CCQ  
— Standby current: 30 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current: 16 mA (Typ)  
at 52 MHz  
— Automatic Power Savings mode  
The Intel StrataFlash® wireless memory (L30) product is the latest generation of Intel  
StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides  
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-  
voltage, multi-level cell (MLC) technology.  
The multiple-partition architecture enables background programming or erasing to occur in one  
partition while code execution or data reads take place in another partition. This dual-operation  
architecture also allows a system to interleave code operations while program and erase  
operations take place in the background.  
The L30 device is manufactured using Intel® 0.13 µm ETOX™ VIII process technology. It is  
available in industry-standard chip scale packaging.  
Order Number: 251903, Revision: 008  
April 2005  

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