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JZ48F4000L0YBQ0A PDF预览

JZ48F4000L0YBQ0A

更新时间： 2024-11-07 13:01:35
品牌 Logo 应用领域
英特尔 - INTEL 闪存存储内存集成电路无线
页数 文件大小 规格书
106页 1700K
描述
Flash, 16MX16, 85ns, PBGA88, 8 X 11 MM, 1 MM HEIGHT, LEAD FREE, BGA-88

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JZ48F4000L0YBQ0A 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：BGA包装说明：8 X 11 MM, 1 MM HEIGHT, LEAD FREE, BGA-88
针数：88Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.79最长访问时间：85 ns
其他特性：SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE备用内存宽度：8
启动块：BOTTOMJESD-30 代码：R-PBGA-B88
JESD-609代码：e1长度：11 mm
内存密度：268435456 bit内存集成电路类型：FLASH
内存宽度：16湿度敏感等级：3
功能数量：1端子数量：88
字数：16777216 words字数代码：16000000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-25 °C组织：16MX16
封装主体材料：PLASTIC/EPOXY封装代码：VFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行：PARALLEL峰值回流温度（摄氏度）：260
编程电压：1.8 V认证状态：Not Qualified
座面最大高度：1 mm最大供电电压 (Vsup)：2 V
最小供电电压 (Vsup)：1.7 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：OTHER端子面层：TIN SILVER COPPER
端子形式：BALL端子节距：0.8 mm
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
类型：NOR TYPE宽度：8 mm
Base Number Matches：1

JZ48F4000L0YBQ0A 数据手册

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Intel StrataFlash® Wireless Memory  
(L18)  
28F640L18, 28F128L18, 28F256L18  
Datasheet  
Product Features  
■ High performance Read-While-Write/Erase  
— 85 ns initial access  
■ Security  
— OTP space:  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— 54 MHz with zero wait state, 14 ns clock-to-  
data output synchronous-burst mode  
— 25 ns asynchronous-page mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Burst suspend  
— Programmable WAIT configuration  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— Absolute write protection: V = GND  
PP  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
■ Software  
— 1.8 V low-power buffered programming at  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
7 µs/byte (Typ)  
■ Architecture  
— Intel® Flash Data Integrator optimized  
— Basic Command Set (BCS) and Extended  
Command Set (ECS) compatible  
— Asymmetrically-blocked architecture  
— Multiple 8-Mbit partitions: 64-Mbit and 128-  
Mbit devices  
— Common Flash Interface (CFI) capable  
— Multiple 16-Mbit partitions: 256-Mbit devices  
— Four 16-Kword parameter blocks: top or  
bottom configurations  
■ Quality and Reliability  
— Expanded temperature: –25° C to +85° C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (0.13 µm)  
■ Density and Packaging  
— 64-Kword main blocks  
— Dual-operation: Read-While-Write (RWW) or  
Read-While-Erase (RWE)  
— 64-, 128-, and 256-Mbit density in VF BGA  
packages  
— 128/0 and 256/0 density in SCSP  
— 16-bit wide data bus  
— Status Register for partition and device status  
■ Power  
— V (core) = 1.7 V - 2.0 V  
CC  
— V  
(I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V  
CCQ  
— Standby current: 30 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current: 15 mA (Typ)  
at 54 MHz  
— Automatic Power Savings mode  
The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel  
StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides  
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-  
voltage, multi-level cell (MLC) technology.  
The multiple-partition architecture enables background programming or erasing to occur in one  
partition while code execution or data reads take place in another partition. This dual-operation  
architecture also allows a system to interleave code operations while program and erase  
operations take place in the background. The 8-Mbit or 16-Mbit partitions allow system  
designers to choose the size of the code and data segments. The L18 wireless memory device is  
manufactured using Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-  
standard chip scale packaging.  
Order Number: 251902, Revision: 009  
April 2005  
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