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JV1N6843CCU3

更新时间： 2024-11-06 11:01:15
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英飞凌 - INFINEON /
页数 文件大小 规格书
14页 192K
描述
30A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N6843CCU3 - JANTXV Certified

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 浏览型号JV1N6843CCU3的Datasheet PDF文件第2页浏览型号JV1N6843CCU3的Datasheet PDF文件第3页浏览型号JV1N6843CCU3的Datasheet PDF文件第4页浏览型号JV1N6843CCU3的Datasheet PDF文件第5页浏览型号JV1N6843CCU3的Datasheet PDF文件第6页浏览型号JV1N6843CCU3的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 25 December 2013.  
INCH-POUND  
MIL-PRF-19500/681C  
25 September 2013  
SUPERSEDING  
MIL-PRF-19500/681B  
5 December 2007  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, DUAL, CENTER TAP,  
TYPE 1N6843CCU3, JAN, JANTX, JANTXV, AND JANS  
This specification is approved for use by all Departments  
and Agencies of the Department of Defense.  
The requirements for acquiring the product described herein shall consist of  
this specification sheet and MIL-PRF-19500.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for silicon, Schottky dual power rectifier  
diodes for use in high frequency switching power supplies and resonant power converters. Four levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See figure 1 (U3).  
1.3 Maximum ratings. Unless otherwise specified, T = +25°C.  
C
Column 1  
Type  
Column 2  
Column 3  
(1) (2)  
Column 4  
Column 5  
Column 6  
Column 7  
Column 8  
V
RWM  
I
I
(2)  
T
STG  
and  
C
J
at 5 V  
O
FSM  
t = 8.3 ms,  
R
θJC  
R
θJC  
(3)  
T
=
(2)  
C
p
T
J
+25°C  
T
= +25°C  
C
pF  
V dc  
100  
A dc  
15  
A (pk)  
100  
°C/W  
°C/W  
°C  
1N6843CCU3  
3.5  
1.75  
-65 to +150  
275  
(1) See temperature-current derating curves in figure 2.  
(2) Each leg.  
(3) Entire package.  
* 1.4 Primary electrical characteristics. R  
= 1.75°C/W maximum for entire package. R  
= 40°C/W maximum  
θJC  
θJA  
each leg. R  
= 3.5°C/W maximum each leg, see figure 3.  
θJC  
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,  
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact  
information can change, you may want to verify the currency of this address information using the ASSIST  
Online database at https://assist.dla.mil/.  
AMSC N/A  
FSC 5961  
 
 
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