Datasheet > JTXV1N6467US

JTXV1N6467US

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
商升特 - SEMTECH		/
页数	文件大小	规格书
4页	126K
描述
Trans Voltage Suppressor Diode, 500W, 40.3V V(RWM), Unidirectional, 1 Element, Silicon,

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JTXV1N6467US 数据手册

1N6461US THRU 1N6468US

QPL 500 Watt Surface Mount TVS

POWER DISCRETES

Features

Description

The 1N64xx series of transient voltage suppressors are

designed to protect military and commercial electronic

equipment from overvoltages caused by lightning, ESD,

EFT, inductive load switching, and EMP. These devices

are constructed using a p-n junction TVS diode in a

hermetically sealed, voidless glass package. The

hermetically sealed package provides high reliability in

harsh environmental conditions. TVS diodes are further

characterized by their high surge capability, low operating

and clamping voltages, and a theoretically instantaneous

response time. This makes them ideal for use as board

500 Watts peak pulse power (tp = 10/1000µs)

Voidless hermetically sealed glass package

Metallurgically bonded

High surge capacity

Unidirectional

Available in JTX, and JTXV versions per

MIL-S-19500/551

Applications

Aerospace and industrial electronics

level protection for sensitive semiconductor components. Board level protection

These devices are DESC QPL qualified to MIL-S-19500/

551.

Airborne systems

Shipboard systems

Ground systems

Mechanical Characteristics

Hermetically sealed glass package

Absolute Maximum Ratings

Rating

Symbol

Value

Units

Peak Pulse Power (tp = 10 x 1000µs)

Storage Temperature Range

Ppk

T_STG

500

-65 to +175

Watts

°C

Steady-State Power Dissipation @ TL = 75°C (3/8")

Watts

Revision: August 8, 2007

www.semtech.com

12 3 4

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