Datasheet > JTDB75

JTDB75

更新时间： 2024-01-15 23:35:07

品牌	Logo	应用领域
GHZTECH		晶体双极型晶体管
页数	文件大小	规格书
3页	233K
描述
High power COMMON BASE bipolar transistor.

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技术参数
数据手册

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JTDB75 技术参数

是否无铅：	含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-CDFM-F2
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.62
Is Samacsys：	N	最大集电极电流 (IC)：	8 A
配置：	SINGLE	最小直流电流增益 (hFE)：	20
最高频带：	L BAND	JESD-30 代码：	R-CDFM-F2
JESD-609代码：	e0	元件数量：	1
端子数量：	2	最高工作温度：	200 °C
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	220 W
认证状态：	Not Qualified	子类别：	BIP RF Small Signal
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

JTDB75 数据手册

JTDB 75

75 Watts, 36 Volts, Pulsed

Avionics 960 - 1215 MHz

GENERAL DESCRIPTION

CASE OUTLINE

55AW, STYLE 1

The JTDB 75 is a high power COMMON BASE bipolar transistor. It is

designed for pulsed systems in the frequency band 960-1215 MHz. The

device has gold thin-film metallization and diffused ballasting for proven

highest MTTF. The transistor includes input and output prematch for

broadband capability. Low thermal resistance package reduces junction

temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25^oC²

220 Watts

Maximum Voltage and Current

BVces Collector to Base Voltage

BVebo Emitter to Base Voltage

55 Volts

3.5 Volts

8.0 Amps

Collector Current

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 200^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Power Out

Power Input

Power Gain

Collector Efficiency

Load Mismatch Tolerance

F = 960-1215 MHz

Vcc = 36 Volts

Watts

Pout

7.0

7.5

PW = 10 sec

DF = 40%

F = 1090 MHz

3:1

VSWR

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC - Current Gain

Ie = 30mA

Ic = 30 mA

Ic = 25 mA, Vce = 5 V

3.5

Volts

BVebo

BVces

h_FE

^oC/W

Thermal Resistance

0.8

Note 1: At rated output power and pulse conditions

2: At rated pulse conditions

Issue A, July 1997

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE

THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE

PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3

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