Datasheet > JSW6-23DR-75+

JSW6-23DR-75+

更新时间： 2024-01-08 04:43:31

品牌	Logo	应用领域
MINI		/
页数	文件大小	规格书
7页	420K
描述
SP6T RF Switch

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数据手册

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JSW6-23DR-75+ 数据手册

SP6T RF Switch

JSW6-23DR-75+

75Ω High Power 3W

5 to 2000 MHz

The Big Deal

• High Port count in super small size

• High Power P0.1dB, 3W

CASE STYLE: MT1817

• Low Insertion Loss, 0.7 dB at 1 GHz

Product Overview

JSW6-23DR-75+ is a high power reﬂective SP6T RF switch, with reﬂective short on output ports in the off

condition. Made using Silicon-on-Insulator process, it has very high IP3, a built-in CMOS driver and nega-

tive voltage generator. Its tiny 2x2mm, 14-lead case enables wideband performance in tight spaces and

dense PCB layouts.

Key Features

Feature

Advantages

Wideband operation

5-2000 MHz

Enables a single component to be used in a vast array of applications from VHF up to

2.0 GHz.

High IIP3:

55 dBm typ.

Results in little or negligible inter-modulation generation, meeting requirements for digital

communication signals.

Low Loss, 0.7 dB at 1 GHz

High input power, 3W

Low loss and high power capability enable a single switch to be used for a variety of ap-

plications, saving inventory.

Operates with a single positive supply voltage; no need for DC blocking capacitors, un-

less external DC is present at the RF ports.

Built in negative voltage generator

Built-in CMOS driver

No need for external driver, saving PCB space and cost.

Tiny MCLP package

2 x 2mm, 14-lead

Provides low inductance, repeatable transitions, and excellent thermal contact to PCB.

Mini-Circuits

www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com

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