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JST60T-1600BW PDF预览

JST60T-1600BW

更新时间: 2024-11-19 14:54:43
品牌 Logo 应用领域
捷捷微 - JJM 可控硅
页数 文件大小 规格书
8页 942K
描述
三象限双向可控硅

JST60T-1600BW 数据手册

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JIEJIE MICROELECTRONICS CO. , Ltd.  
JST60T-1600BW 60A TRIAC  
Rev.A.1.0  
DESCRIPTION:  
The JST60T-1600BW triac is suitable for general purpose  
AC switching. It can be used as an ON/OFF function in  
applications such as heating regulation, induction motor  
starting circuits, for phase control operation in light dimmers,  
motor speed controllers. JST60T-1600BW snubberless triac is  
especially recommended for use on inductive loads. By using  
a DBC, JST60T-1600BW provides a rated insulation voltage  
of 2500 VRMS, complying with UL standards  
(File ref: E252906). Package TG-C is RoHS compliant.  
MAIN FEATURES  
Symbol  
IT(RMS)  
Value  
60  
Unit  
A
VDRM /VRRM  
1600  
V
IGT / /  
50/50/50  
mA  
Ⅰ Ⅱ Ⅲ  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Tstg  
Value  
-40-150  
-40-125  
1600  
Unit  
V
Storage junction temperature range  
Operating junction temperature range  
Repetitive peak off-state voltage (Tj=25)  
Repetitive peak reverse voltage (Tj=25)  
RMS on-state current (TC94)  
Tj  
VDRM  
VRRM  
IT(RMS)  
1600  
V
60  
A
Non repetitive surge peak on-state current  
(full cycle , tp=20ms , Tj=25)  
Non repetitive surge peak on-state current  
(full cycle , tp=16.6ms , Tj=25)  
600  
ITSM  
A
660  
1800  
100  
I2t value for fusing (tp=10ms , Tj=25)  
I2t  
A2s  
Critical rate of rise of on-state current  
(IG=2×IGT , f=100Hz , Tj=125)  
dI/dt  
A/μs  
Peak gate current (tp=20μs , Tj=125)  
IGM  
8
A
Average gate power dissipation (Tj=125)  
PG(AV)  
0.5  
W
TEL+86-513-68528666  
http://www.jjwdz.com  
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Optimized for Silicon Carbide (SiC) MOSFET Modules