Datasheet > JST136F-800E

JST136F-800E

更新时间： 2023-12-06 20:08:47

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
8页	1063K
描述
四象限双向可控硅

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JST136F-800E 数据手册

JIEJIE MICROELECTRONICS CO. , Ltd.

JST136F-800E 4A TRIAC

Rev.A.1.0

DESCRIPTION:

The JST136F-800E triac is suitable for general purpose

AC switching. It can be used as an ON/OFF function

in applications such as heating regulation, induction

motor starting circuits, for phase control operation in

light dimmers, motor speed controllers. By using an

external plastic package, JST136F-800E provides a rated

insulation voltage of 2000 VRMS, complying with UL

standards (File ref: E252906). Package TO-220F is

RoHS compliant.

MAIN FEATURES

Symbol

Value

Unit

I_T(RMS)

V_DRM/V_RRM

800

I_{GT / / /}

Ⅰ Ⅱ Ⅲ Ⅳ

10/10/10/25

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

T_stg

Value

-40-150

-40-125

800

Unit

℃

Storage junction temperature range

Operating junction temperature range

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

RMS on-state current (T_C≤86℃)

T_j

V_DRM

V_RRM

I_T(RMS)

800

Non repetitive surge peak on-state current

(full cycle , t_p=20ms , T_j=25℃)

Non repetitive surge peak on-state current

(full cycle , t_p=16.6ms , T_j=25℃)

I_TSM

38.5

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

6.1

A²s

Ⅰ-Ⅱ-Ⅲ

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

A/μs

Ⅳ

Peak gate current (t_p=20μs , T_j=125℃)

I_GM

Average gate power dissipation (T_j=125℃)

P_G(AV)

0.5

TEL：+86-513-68528666

http://www.jjwdz.com

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