Datasheet > JSKH200/22

JSKH200/22

更新时间： 2024-09-19 14:54:47

品牌	Logo	应用领域
捷捷微 - JJM		二极管可控硅
页数	文件大小	规格书
4页	569K
描述
可控硅+二极管模块

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中文翻译

获取价格

数据手册

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JSKH200/22 数据手册

Rev.1.0 July 27 2022

JSKT200&JSKH200

Description:

1) A package of series of two chips.

2) With high thermal conductivity DBC as the insulation.

3) Welding by vacuum welding technology, which provide high reliability.

Typical Application:

DC motor control, temperature control and light control system.

Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, T_CASE=25℃)

Values

Parameter

Test Conditions

Symbol

Unit

-40~125

2000

Operating junction temperature range

Storage temperature range

T_j

T_stg

℃

Repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak off-state voltage

Non-repetitive peak reverse voltage

Average on-state current

T_j=25℃

V_DRM

V_RRM

V_DSM

V_RSM

I_T(AV)/I_F(AV)

I_TSM/I_FSM

I²t

2200

2300

T_j=25℃

2000

2100

T_j=25℃

T_C=85℃

200

Peak on-state surge current

I²t value for fusing

t_P=10ms V_R=0.6V_RRM

I_G=2×I_GT

5400

145000

A²s

Critical rate of rise of on-state current

Insulation voltage

dI/dt

150

A/μs

3600/3000

A.C 50Hz(1s/1min)

V_ISO

Electrical Characteristics (Packaged into modules, unless otherwise specified, T_CASE=25℃)

Parameter

Peak on-state voltage

Test Conditions

I_T=600A t_P=380μs

T_j=125℃

Symbol

V_TM

Values

≤1.8

Unit

Threshold voltage

Dynamic resistance

V_TO

≤0.9

T_j=125℃

R_d

≤1.6

mΩ

TEL：+86-513-83639777

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http://www.jjwdz.com

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中文翻译

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