Datasheet > JS70KQ/16

JS70KQ/16

更新时间： 2023-12-06 20:10:39

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
3页	270K
描述
可控硅模块

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JS70KQ/16 数据手册

Anti-parallel Module

JS70KQ

Rev.3.2 Aug.9 2023

Description

1)A package consists of two inverse parallel SCR chips, which rated voltage

is up to 1800V

2) Welding by vacuum welding technology, which provide high reliability

3) Insulated by silicone gel, provide a insulation voltage of 3000V~

Typical Application

Soft start, solid state relay, AC/DC switch, temperature control.

Absolute Maximum Ratings (Packaged into modules, unless otherwise specified, TCASE=25℃)

Parameter

Test Conditions

Symbol

Values

-40-125

Unit

℃

Operating junction temperature range

Repetitive peak off-state voltage

Repetitive peak reverse voltage

RMS on-state current

T_J

V_DRM

V_RRM

I_T(RMS)

I_TSM

1200/1600/1800

T_J=25℃

T_C=80℃

Peak on-state surge current

I²t value for fusing

700

t_P=10ms V_R=0.6V_RRM

I_G=2×I_GT

I²t

2450

A²s

Critical rate of rise of on-state current

di/dt

150

A/μs

Electrical Characteristics (Packaged into modules, unless otherwise specified, T_CASE=25℃)

Parameter

Peak on-state voltage

Test Conditions

Symbol

V_TM

Values

≤1.8

≤0.9

≤8

Unit

I_T=105A t_P=380μs

T_J=125℃

Threshold voltage

Dynamic resistance

V_TO

T_J=125℃

R_d

mΩ

V_D=V_RRM

TC=25℃

I_DRM1

≤50

≤15

μA

Repetitive peak off-state current

Repetitive peak reverse current

T^C=125℃

IDRM2

V_R=V_RRM

TC=25℃

I_RRM1

I_RRM2

I_GT

≤50

≤15

μA

T^C=125℃

Triggering gate current

Holding current

V_D=12V R_L=30Ω

20-120

≤150

I_T=1A

I_H

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