Datasheet > JS28F256P33B95

JS28F256P33B95

更新时间： 2024-09-26 07:26:39

品牌	Logo	应用领域
英特尔 - INTEL		光电二极管
页数	文件大小	规格书
104页	1595K
描述
Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56

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JS28F256P33B95 数据手册

Intel StrataFlash Embedded Memory (P33)

Datasheet

Product Features

High performance:

Security:

— 85 ns initial access

— One-Time Programmable Registers:

— 64 unique factory device identifier bits

— 2112 user-programmable OTP bits

— Selectable OTP space in Main Array:

— Four pre-defined 128-KByte blocks (top or

bottom configuration).

— 52MHz with zero wait states, 17ns clock-to-

data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

— Up to Full Array OTP Lockout

— Absolute write protection: V = V

— 3.0 V buffered programming at 7 µs/byte

(Typ)

Architecture:

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down capability

Software:

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel Flash Data Integrator optimized

— 128-KByte main blocks

— Basic Command Set and Extended Command

Voltage and Power:

Set compatible

— V

(core) voltage: 2.3 V – 3.6 V

CCQ

— Common Flash Interface capable

Density and Packaging

(I/O) voltage: 2.3 V – 3.6 V

— Standby current: 35µA (Typ) for 64-Mbit

— 4-Word synchronous read current:

16 mA (Typ) at 52MHz

— 56-Lead TSOP package (64, 128, 256, 512-

Mbit)

— 64-Ball Intel® Easy BGA package (64, 128,

256, 512-Mbit)

Quality and Reliability

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology

— Intel® QUAD+ SCSP (64, 128, 256, 512-Mbit)

— 16-bit wide data bus

Order Number: 314749-004

November 2007

12 3 4 5 6 7...104

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与JS28F256P33B95相关器件

型号	品牌	获取价格	描述	数据表
JS28F256P33B95A	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56
JS28F256P33B95A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
JS28F256P33B95B	NUMONYX	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F256P33B95B	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
JS28F256P33BF	MICRON	获取价格	NumonyxTM StrataFlash Embedded Memory
JS28F256P33BFA	NUMONYX	获取价格	Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F256P33BFA	MICRON	获取价格	Anticipating electrostatic discharge (ESD) technology roadmap trends with ESD control hard
JS28F256P33BFE	MICRON	获取价格	NumonyxTM StrataFlash Embedded Memory
JS28F256P33T95	INTEL	获取价格	Flash, 16MX16, 95ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56
JS28F256P33T95A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory