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JS28F00AP33TFA PDF预览

JS28F00AP33TFA

更新时间: 2024-10-29 01:04:35
品牌 Logo 应用领域
镁光 - MICRON 光电二极管内存集成电路
页数 文件大小 规格书
92页 987K
描述
Micron Parallel NOR Flash Embedded Memory (P33-65nm)

JS28F00AP33TFA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TSOP
包装说明:TSSOP,针数:56
Reach Compliance Code:compliant风险等级:5.74
最长访问时间:105 ns其他特性:TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE
启动块:TOPJESD-30 代码:R-PDSO-G56
JESD-609代码:e3长度:18.4 mm
内存密度:1073741824 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:56字数:67108864 words
字数代码:64000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):260编程电压:3 V
座面最大高度:1.2 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

JS28F00AP33TFA 数据手册

 浏览型号JS28F00AP33TFA的Datasheet PDF文件第2页浏览型号JS28F00AP33TFA的Datasheet PDF文件第3页浏览型号JS28F00AP33TFA的Datasheet PDF文件第4页浏览型号JS28F00AP33TFA的Datasheet PDF文件第5页浏览型号JS28F00AP33TFA的Datasheet PDF文件第6页浏览型号JS28F00AP33TFA的Datasheet PDF文件第7页 
512Mb, 1Gb, 2Gb: P33-65nm  
Features  
Micron Parallel NOR Flash Embedded  
Memory (P33-65nm)  
JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA  
PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA  
JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA  
PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,  
PC28F00BP33EFA  
• Security  
Features  
• High performance  
– One-time programmable register: 64 OTP bits,  
programmed with unique information from Mi-  
cron; 2112 OTP bits available for customer pro-  
gramming  
• Easy BGA package features  
– 95ns initial access for 512Mb, 1Gb Easy BGA  
– 100ns initial access for 2Gb Easy BGA  
– 25ns 16-word asychronous page read mode  
– 52 MHz (Easy BGA) with zero WAIT states and  
17ns clock-to-data output synchronous burst  
read mode  
– 4-, 8-, 16-, and continuous word options for burst  
mode  
• TSOP package features  
– Absolute write protection: VPP = VSS  
– Power-transition erase/program lockout  
– Individual zero-latency block locking  
– Individual block lock-down  
– Password access  
• Software  
25μs (TYP) program suspend  
25μs (TYP) erase suspend  
– 105ns initial access for 512Mb, 1Gb TSOP  
• Both Easy BGA and TSOP package features  
– Buffered enhanced factory programming (BEFP)  
at 2 MB/s (TYP) using a 512-word buffer  
– 3.0V buffered programming at 1.46 MB/s (TYP)  
using a 512-word buffer  
– Flash Data Integrator optimized  
– Basic command set and extended function Inter-  
face (EFI) command set compatible  
– Common flash interface  
• Density and Packaging  
– 56-lead TSOP package (512Mb, 1Gb)  
– 64-ball Easy BGA package (512Mb, 1Gb, 2Gb)  
– 16-bit wide data bus  
• Quality and reliabilty  
– JESD47 compliant  
• Architecture  
– MLC: highest density at lowest cost  
– Symmetrically blocked architecture (512Mb, 1Gb,  
2Gb)  
– Asymmetrically blocked architecture (512Mb,  
1Gb); four 32KB parameter blocks: top or bottom  
configuration  
– Operating temperature: –40°C to +85°C  
– Minimum 100,000 ERASE cycles per block  
– 65nm process technology  
– 128KB main blocks  
– Blank check to verify an erased block  
• Voltage and power  
– VCC (core) voltage: 2.3–3.6V  
– VCCQ (I/O) voltage: 2.3–3.6V  
– Standy current: 70µA (TYP) for 512Mb; 75µA  
(TYP) for 1Gb  
– 52 MHz continuous synchronous read current:  
21mA (TYP), 24mA (MAX)  
PDF: 09005aef845667b8  
p33_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. C 12/13 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2013 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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