Datasheet > JR0405V

JR0405V

更新时间： 2024-11-12 14:54:19

品牌	Logo	应用领域
捷捷微 - JJM		可控硅
页数	文件大小	规格书
10页	1159K
描述
门极带阻灵敏型单向可控硅

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数据手册

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JR0405V 数据手册

JIEJIE MICROELECTRONICS CO., LTD.

JR0405V 2A SCR

Rev.A.1.0

DESCRIPTION:

The JR0405V SCR with the parallel resistor

between Gate and Cathode, R_GK=10~80kΩ，

are especially recommended for use on straight

hair, igniter, anion generator, etc. Package

SOT-223 is RoHS compliant.

MAIN FEATURES

Symbol

I_T(RMS)

Value

Unit

V_DRM/V_RRM

I_GT

600

≤200

μA

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage junction temperature range

T_stg

-40-150

℃

①

Operating junction temperature range

T_j

℃

-40-125

Repetitive peak off-state voltage (T_j=25℃)

Repetitive peak reverse voltage (T_j=25℃)

Average on-state current (T_C≤77℃)

RMS on-state current (T_C≤77℃)

V_DRM

V_RRM

I_T(AV)

600

1.3

I_T(RMS)

Non repetitive surge peak on-state current

(t_p=10ms , T_j=25℃)

Non repetitive surge peak on-state current

(t_p=8.3ms , T_j=25℃)

I_TSM

3.2

I²t value for fusing (t_p=10ms , T_j=25℃)

I²t

A²s

Critical rate of rise of on-state current

(I_G=2×I_GT, f=100Hz , T_j=125℃)

dI/dt

A/μs

Peak gate current (t_p=20μs, T_j=125℃)

I_GM

Average gate power dissipation (T_j=125℃)

P_G(AV)

0.5

TEL：+86-513-68528666

http://www.jjwdz.com

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