Datasheet > JPAD200-TO-92-2L-ROHS

JPAD200-TO-92-2L-ROHS

更新时间： 2024-02-26 17:24:20

品牌	Logo	应用领域
凌特 - Linear		二极管
页数	文件大小	规格书
2页	257K
描述
Rectifier Diode, 1 Element, 0.1A, 35V V(RRM),

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技术参数
数据手册

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JPAD200-TO-92-2L-ROHS 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.84
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.5 V	元件数量：	1
最高工作温度：	150 °C	最大输出电流：	0.1 A
最大重复峰值反向电压：	35 V	子类别：	Rectifier Diodes
表面贴装：	NO

JPAD200-TO-92-2L-ROHS 数据手册

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PAD SERIES

PICO AMPERE DIODES

FEATURES

DIRECT REPLACEMENT FOR SILICONIX PAD SERIES

REVERSE BREAKDOWN VOLTAGE

BV_R≥ -30V

C_rss≤ 2.0pF

PAD1,2,5

PAD50

REVERSE CAPACITANCE

ABSOLUTE MAXIMUM RATINGS¹

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to +150 °C

JPAD

Operating Junction Temperature

Maximum Power Dissipation

Continuous Power Dissipation (PAD)

Continuous Power Dissipation (J/SSTPAD)

Maximum Currents

SSTPAD

SOT-23

TOP VIEW

300mW

350mW

Forward Current (PAD)

50mA

10mA

Forward Current (J/SSTPAD)

COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN TYP MAX UNITS CONDITIONS

ALL PAD

ALL SSTPAD

ALL JPAD

-45

Reverse Breakdown

Voltage

BV_R

-30

-35

I_R= -1µA

V_F

Forward Voltage

0.8

0.5

1.5

0.8

I_F= 5mA

PAD1,5

C_rss

Total Reverse Capacitance

V_R= -5V, f = 1MHz

All Others

SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL CHARACTERISTIC

PAD

-1

JPAD

SSTPAD

UNITS CONDITIONS

PAD1

PAD2

-2

(SST/J)PAD5

(SST/J)PAD10

(SST/J)PAD20

(SST/J)PAD50

(SST/J)PAD100

(SST/J)PAD200

(SST/J)PAD500

-5

-10

-20

-50

-100

-10

-20

-50

Maximum Reverse

Leakage Current

-20

I_R

V_R= -20V

-50

-100

-200

-500

1. Derate 2mW/°C above 25°C

2. Derate 2.8mW/°C above 25°C

Linear Integrated Systems

•

4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

Doc 201142 11/01/12 Rev#A6 ECN# PAD SERIES

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