Datasheet > JMTY2310A

JMTY2310A

更新时间： 2024-11-19 14:55:51

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	325K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMTY2310A 数据手册

JMTY2310A

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 V_DS=60V, I_D=5A

 Load Switch

R_DS(ON)<100mΩ @ VGS =10V

 PWM Application

 Power management

R_DS(ON)<125mΩ @ VGS =4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

100% UIS TESTED!

100% ΔVds TESTED!

SOT-223-3L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

JMTY2310A

TAPING

SOT-223-3L

13inch

4000

40000

Absolute Maximum Ratings (T_A=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

Gate-Source Voltage

±20

T_A= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_A= 100℃

3.3

I_DM

EAS

P_D

Single Pulsed Avalanche Energy ^note2

Power Dissipation

T_A= 25℃

Thermal Resistance, Junction to Case

R_θJA

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version : 1.1

- 1 -

12 3 4 5 6

中文翻译

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