JMTQ240N03D
Description
JMT Dual N-channel Enhancement Mode Power MOSFET
Features
Applications
Load Switch
30V, 12A
PWM Application
Power Management
RDS(ON) < 21.6mΩ @ VGS = 10V
RDS(ON) < 30mΩ @ VGS = 4.5V
Advanced Trench Technology
Excellent RDS(ON) and Low Gate Charge
Lead Free
100% UIS TESTED!
100% ΔVds TESTED!
D1
D2
S2
G1
G2
S1
PDFN3x3-8L-D
Schematic Diagram
Marking and Pin Assignment
Package Marking and Ordering Information
Per Carton
(pcs)
Device Marking
Device
Package
Outline
Reel Size Reel(pcs)
13" 5000
Q240N03D
JMTQ240N03D
PDFN3x3-8L-D
TAPING
50000
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)
Parameter
Value
Symbol
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
30
±20
12
8
V
V
TC = 25°C
ID
Continuous Drain Current
A
TC = 100°C
Pulsed Drain Current (1)
Single Pulsed Avalanche Energy(2)
IDM
EAS
48
12
15
62
8.3
A
mJ
W
PD
Power Dissipation
TC = 25°C
Thermal Resistance, Junction to Ambient(3)
Thermal Resistance, Junction to Case
Junction & Storage Temperature Range
RθJA
RθJC
TJ, TSTG
°C/W
°C
-55 to 150
JieJie Microelectronics Co., Ltd
1
Version:1.2