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JMTQ240C03D PDF预览

JMTQ240C03D

更新时间: 2024-11-19 14:54:19
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
10页 793K
描述
低压 N-ch (≤ 30V )

JMTQ240C03D 数据手册

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JMTQ240C03D  
Description  
JMT N And P-channel Enhancement Mode Power MOSFET  
Features  
Applications  
Battery Protection  
Load Switch  
N-channel:30V, 10A  
RDS(ON) < 21mΩ @ VGS = 10V  
RDS(ON) < 30mΩ @ VGS = 4.5V  
P-channel: -30V, -8A  
Power Management  
100% UIS TESTED!  
100% ΔVds TESTED!  
RDS(ON) < 27mΩ @ VGS = -10V  
RDS(ON) < 38mΩ @ VGS =- 4.5V  
Excellent Gate Charge x RDS(ON) Product(FOM)  
Very Low On-resistance RDS(ON)  
Fast Switching Speed  
D2  
S2  
D1  
G2  
G1  
S1  
PDFN3x3-8L-D  
Schematic Diagram  
Marking and Pin Assignment  
Package Marking and Ordering Information  
Per Carton  
(pcs)  
Device Marking  
Device  
Package  
Outline  
Reel Size Reel(pcs)  
13" 5000  
Q240C03D  
JMTQ240C03D  
PDFN3x3-8L-D  
TAPING  
50000  
Absolute Maximum Ratings (@ TC = 25°C unless otherwise specified)  
Parameter  
Value-N-channel  
Value-P-channel  
Symbol  
Units  
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
30  
-30  
V
V
±20  
TC = 25°C  
10  
6.3  
40  
12  
-8  
-5.1  
-32  
20  
ID  
Continuous Drain Current  
A
TC = 100°C  
Pulsed Drain Current (1)  
Single Pulsed Avalanche Energy(2)  
IDM  
EAS  
A
mJ  
W
PD  
Power Dissipation  
TC = 25°C  
15  
66  
Thermal Resistance, Junction to Ambient(3)  
Thermal Resistance, Junction to Case  
Junction & Storage Temperature Range  
RθJA  
RθJC  
TJ, TSTG  
°C/W  
°C  
8.3  
-55 to 150  
JieJie Microelectronics Co., Ltd  
1
Version1.2  

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