Datasheet > JMTQ160P03A

JMTQ160P03A

更新时间： 2023-12-06 20:10:27

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	473K
描述
低压 P-ch (-30V ~ -5V)

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数据手册

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JMTQ160P03A 数据手册

JMTQ160P03A

Description

JMT P-channel Enhancement Mode Power MOSFET

Features

Application

 V_DS= -30V, I_D= -15A

 PWM Applications

 Load Switch

R_DS(ON)< 14mΩ @ V_GS= -10V

R_DS(ON)< 24mΩ @ V_GS= -4.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

 Power Management

100% UIS TESTED!

100% ΔVds TESTED!

PDFN3x3-8L

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

Q160P03A

JMTQ160P03A

TAPING

PDFN3x3-8L

13inch

5000

50000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

-30

±20

Gate-Source Voltage

T_C= 25℃

-15

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

-9.8

I_DM

E_AS

-60

Single Pulsed Avalanche Energy ^note2

P_D

Power Dissipation

T_C= 25℃

5.4

R_θJA

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

℃/W

℃

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.1

- 1 -

12 3 4 5 6

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