Datasheet > JMTLA3134K

JMTLA3134K

更新时间： 2023-12-06 20:08:40

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	317K
描述
低压 N-ch (≤ 30V )

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JMTLA3134K 数据手册

JMTLA3134K

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 20V, 0.9A

 Load Switch

 PWM Application

R_DS(ON)< 175mΩ @ V_GS=4.5V

R_DS(ON)< 275mΩ @ V_GS=2.5V

 Advanced Trench Technology

 Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

 ESD Protected: 2KV

 Power management

SOT-323-3L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Reel Size

34K

JMTLA3134K

TAPING

SOT-323-3L

7inch

3000

120000

Absolute Maximum Ratings (T_A=25℃ unless otherwise specified)

Symbol

V_DSS

Parameter

Max.

Units

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±10

T_A= 25℃

0.9

I_D

Continuous Drain Current

T_A= 100℃

0.6

Pulsed Drain Current ^note1

Power Dissipation

I_DM

P_D

3.6

T_A= 25℃

0.23

Thermal Resistance, Junction to Case

R_θJA

543

℃/W

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

JieJie Microelectronics CO. , Ltd

Version :1.0

- 1 -

12 3 4 5 6

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