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JMTE035N04A PDF预览

JMTE035N04A

更新时间: 2024-11-24 14:51:03
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页数 文件大小 规格书
6页 538K
描述
中压 N-ch (40V ~ 400V)

JMTE035N04A 数据手册

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JMTE035N04A  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Application  
40V, 150A  
Load Switch  
RDS(ON) <4mΩ @ VGS = 10V  
PWM Application  
Power management  
Advanced Trench Technology  
Provide Excellent RDS(ON) and Low Gate Charge  
Lead free product is acquired  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-263 top view  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
Reel  
Size  
Reel  
Per Carton  
Device Marking  
Device  
OUTLINE  
Device Package  
(PCS)  
(PCS)  
JMTE035N04A  
JMTE035N04A  
TAPING  
TO-263  
13inch  
800  
4000  
Absolute Maximum Ratings (TC=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
VDSS  
VGSS  
40  
±20  
V
V
Gate-Source Voltage  
TC = 25  
150  
A
ID  
Continuous Drain Current  
Pulsed Drain Current note1  
TC = 100℃  
98  
A
IDM  
EAS  
PD  
600  
A
Single Pulsed Avalanche Energy note2  
272  
mJ  
W
Power Dissipation  
TC = 25℃  
180  
RθJC  
Thermal Resistance, Junction to Case  
0.83  
/W  
TJ, TSTG Operating and Storage Temperature Range  
-55 to +175  
JieJie Microelectronics CO. , Ltd  
Version :1.0  
- 1 -  

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