JMTE035N04A
Description
JMT N-channel Enhancement Mode Power MOSFET
Features
Application
40V, 150A
Load Switch
RDS(ON) <4mΩ @ VGS = 10V
PWM Application
Power management
Advanced Trench Technology
Provide Excellent RDS(ON) and Low Gate Charge
Lead free product is acquired
100% UIS TESTED!
100% ΔVds TESTED!
TO-263 top view
Marking and pin Assignment
Schematic Diagram
Package Marking and Ordering Information
Reel
Size
Reel
Per Carton
Device Marking
Device
OUTLINE
Device Package
(PCS)
(PCS)
JMTE035N04A
JMTE035N04A
TAPING
TO-263
13inch
800
4000
Absolute Maximum Ratings (TC=25℃ unless otherwise specified)
Symbol
Parameter
Drain-Source Voltage
Max.
Units
VDSS
VGSS
40
±20
V
V
Gate-Source Voltage
TC = 25℃
150
A
ID
Continuous Drain Current
Pulsed Drain Current note1
TC = 100℃
98
A
IDM
EAS
PD
600
A
Single Pulsed Avalanche Energy note2
272
mJ
W
Power Dissipation
TC = 25℃
180
RθJC
Thermal Resistance, Junction to Case
0.83
℃/W
℃
TJ, TSTG Operating and Storage Temperature Range
-55 to +175
JieJie Microelectronics CO. , Ltd
Version :1.0
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