Datasheet > JMTE025N04D

JMTE025N04D

更新时间： 2023-12-06 19:59:55

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	380K
描述
中压 N-ch (40V ~ 400V)

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JMTE025N04D 数据手册

JMTE025N04D

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 40V, 190A

 Load Switch

R_DS(ON)< 2.6mΩ @ V_GS= 10V

 PWM Application

 Power Management

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead Free

100% UIS TESTED!

100% ΔVds TESTED!

TO-263-3L top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Reel

Size

Reel

Per Carton

(pcs)

Device Marking

Device

Outline

Package

(pcs)

JMTE025N04D

TAPING

TO-263-3L

13”

800

4000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

±25

Gate-Source Voltage

T_C= 25℃

190

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

124

I_DM

EAS

P_D

760

Single Pulsed Avalanche Energy ^note2

576

Power Dissipation

T_C= 25℃

197

R_θJC

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

0.76

℃/W

℃

T_J, T_STG

-55 to +175

JieJie Microelectronics Co.,Ltd

Version :1.2

- 1 -

12 3 4 5 6

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