Datasheet > JMTC80N06A

JMTC80N06A

更新时间： 2024-11-24 14:52:31

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	578K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

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数据手册

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JMTC80N06A 数据手册

JMTC80N06A

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 60V, 80A

 Load Switch

R_DS(ON)< 7mΩ @ V_GS= 10V

 PWM Application

 Power management

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

100% UIS TESTED!

100% ΔVds TESTED!

TO-220C top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

Inner

TUBE

(PCS)

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

Box

(PCS)

JMTC80N06A

TUBE

TO-220C

1,000

8,000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

±20

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

I_DM

EAS

P_D

320

Single Pulsed Avalanche Energy ^note2

169

Power Dissipation

T_C= 25℃

108

Thermal Resistance, Junction to Case

R_θJC

1.4

℃

T_J, T_STGOperating and Storage Temperature Range

-55 to +175

℃

JieJie Microelectronics CO. , Ltd

Version :1.2

- 1 -

12 3 4 5 6

中文翻译

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