Datasheet > JMTC6888A

JMTC6888A

更新时间： 2023-12-06 20:06:23

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
6页	537K
描述
中压 N-ch (40V ~ 400V)

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JMTC6888A 数据手册

JMTC6888A

Description

JMT N-channel Enhancement Mode Power MOSFET

Features

Application

 68V, 80A

 Load Switch

R_DS(ON)<9mΩ @ V_GS=10V

 PWM Application

 Power management

 Advanced Trench Technology

 Provide Excellent R_DS(ON)and Low Gate Charge

 Lead free product is acquired

100% UIS TESTED!

100% ΔVds TESTED!

TO-220C top view

Marking and pin Assignment

Schematic Diagram

Package Marking and Ordering Information

TUBE Inner Box

Per Carton

(PCS)

Device Marking

Device

OUTLINE

Device Package

(PCS)

JMTC6888A

TUBE

TO-220C

1,000

8,000

Absolute Maximum Ratings (T_C=25℃ unless otherwise specified)

Symbol

Parameter

Drain-Source Voltage

Max.

Units

V_DSS

V_GSS

±20

Gate-Source Voltage

T_C= 25℃

I_D

Continuous Drain Current

Pulsed Drain Current ^note1

T_C= 100℃

I_DM

E_AS

320

Single Pulsed Avalanche Energy ^note2

110

P_D

Power Dissipation

T_C= 25℃

103

R_θJC

Thermal Resistance, Junction to Case

1.46

-55 to +175

℃/W

℃

T_J, T_STGOperating and Storage Temperature Range

JieJie Microelectronics CO. , Ltd

Version :1.1

- 1 -

12 3 4 5 6

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