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JMTC320N10A PDF预览

JMTC320N10A

更新时间: 2024-11-24 14:54:59
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 546K
描述
中压 N-ch (40V ~ 400V)

JMTC320N10A 数据手册

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JMTC320N10A  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Application  
100V, 30A  
Load Switch  
RDS(ON) <32mΩ @ VGS = 10V  
PWM Application  
Power management  
RDS(ON) <36mΩ @ VGS = 4.5V  
Advanced Trench Technology  
Provide Excellent RDS(ON) and Low Gate Charge  
Lead free product is acquired  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-220C top view  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
TUBE Inner Box Per Carton  
Device Marking  
Device  
OUTLINE  
Device Package  
(PCS)  
(PCS)  
(PCS)  
JMTC320N10A  
JMTC320N10A  
TUBE  
TO-220C  
50  
1,000  
5,000  
Absolute Maximum Ratings (TC=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
VDSS  
VGSS  
100  
±20  
V
V
Gate-Source Voltage  
TC = 25  
30  
A
ID  
Continuous Drain Current  
Pulsed Drain Current note1  
TC = 100℃  
20  
A
IDM  
EAS  
PD  
120  
A
Single Pulsed Avalanche Energy note2  
52.6  
63  
mJ  
W
Power Dissipation  
TC = 25℃  
Thermal Resistance, Junction to Case  
RθJC  
2.4  
/W  
TJ, TSTG Operating and Storage Temperature Range  
-55 to +175  
JieJie Microelectronics CO. , Ltd  
Version :1.1  
- 1 -  

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