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JMTC025N04D PDF预览

JMTC025N04D

更新时间: 2024-11-27 14:54:19
品牌 Logo 应用领域
捷捷微 - JJM /
页数 文件大小 规格书
6页 342K
描述
中压 N-ch (40V ~ 400V)

JMTC025N04D 数据手册

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JMTC025N04D  
Description  
JMT N-channel Enhancement Mode Power MOSFET  
Features  
Application  
40V, 190A  
Load Switch  
RDS(ON) < 2.6mΩ @ VGS = 10V  
PWM Application  
Power management  
Advanced Trench Technology  
Provide Excellent RDS(ON) and Low Gate Charge  
Lead free product is acquired  
100% UIS TESTED!  
100% ΔVds TESTED!  
TO-220C top view  
Marking and pin Assignment  
Schematic Diagram  
Package Marking and Ordering Information  
TUBE  
(PCS)  
Inner Box  
(PCS)  
Per Carton  
(PCS)  
Device Marking  
Device  
OUTLINE  
Device Package  
JMTC025N04D  
JMTC025N04D  
TUBE  
TO-220C  
50  
1000  
5000  
Absolute Maximum Ratings (TC=25unless otherwise specified)  
Symbol  
Parameter  
Drain-Source Voltage  
Max.  
Units  
VDSS  
VGSS  
40  
V
V
Gate-Source Voltage  
±25  
190  
124  
760  
576  
197  
0.76  
TC = 25  
A
ID  
Continuous Drain Current  
Pulsed Drain Current note1  
TC = 100℃  
A
IDM  
EAS  
PD  
A
Single Pulsed Avalanche Energy note2  
mJ  
W
Power Dissipation  
TC = 25℃  
RθJC  
Thermal Resistance, Junction to Case  
/W  
TJ, TSTG Operating and Storage Temperature Range  
-55 to +175  
JieJie Microelectronics CO. , Ltd  
Version :1.0  
- 1 -  

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