Datasheet > JMSL1040AV

JMSL1040AV

更新时间： 2024-11-23 14:55:27

品牌	Logo	应用领域
捷捷微 - JJM		/
页数	文件大小	规格书
5页	280K
描述
中压 N-ch (40V ~ 400V)

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中文翻译

获取价格

数据手册

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JMSL1040AV 数据手册

JMSL1040AV

100V 29m N-Ch Power MOSFET

Product Summary

Features

Parameter

V_DS

Value

Unit

•

Low Gate Charge

Low Input Capacitance

100

1.9

4.7

V_{GS(th)_Typ}

I_D(@ V_GS= 10V) ⁽¹⁾

100% UIS Tested, 100% Rg Tested

Excepcional R_DS(ON)in Low-profile DFN2020-6L

Pb-free Lead Plating

R_{DS(ON)_Typ}(@ V_GS= 10V)

m

R_{DS(ON)_Typ}(@ V_GS= 4.5V)

Halogen-free and RoHS-compliant

Applications

•

Power Management in Computing, CE, IE 4.0, Communications

Current Switching in DC/DC & AC/DC Sub-systems

Power/Load Switching in End Systems of Small Enclosure

U-DFN2020-6L

Top View

Pin Configuration

Top View

Bottom View

Ordering Information

Device

T_J(°C)

Package

# of Pins

Marking

MSL

Media

Quantity (pcs)

JMSL1040AV-7

U-DFN2020-6L

-55 to 150

7-inch Reel

3000

Absolute Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Value

Symbol

V_DS

Unit

Drain-to-Source Voltage

Gate-to-Source Voltage

100

±20

V_GS

T_A= 25°C

4.7

Continuous Drain

Current ⁽¹⁾

I_D

T_A= 70°C

3.8

Pulsed Drain Current ⁽²⁾

Avalanche Current ⁽³⁾

Avalanche Energy ⁽³⁾

I_DM

I_AS

18.8

16.0

12.8

1.5

E_AS

T_A= 25°C

Power Dissipation ⁽⁴⁾

P_D

T_A= 70°C

Junction & Storage Temperature Range

0.94

-55 to 150

T_J, T_STG

°C

R_DS(ON)vs. V_GS

Gate Charge

200

160

120

V_DS= 50V

_D= 4.5A

I_D= 4.5A

Q_g(nC)

V_GS(V)

JieJie Microelectronics Co., Ltd.

All product information are copyrighted and subject to legal disclaimers

Rev. 1.1

Page 1 of 5

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